公开(公告)号：US20240071732A1

公开(公告)日：2024-02-29

申请号：US18236748

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Hyun-Sik HWANG ,  Jinyoung BANG ,  Sungil CHO ,  Junghwan UM

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/311

CPC classification number: H01J37/32642 ,  H01J37/32449 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/334

Abstract: A dry etching apparatus includes a process chamber; a support provided in the process chamber and configured to support a substrate; a gas supply configured to supply a process gas including a hydrogen gas (H2) and a fluorocarbon gas (CxFy) into the process chamber; a plasma source configured to generate plasma using the process gas in the process chamber, wherein the support includes: an electrostatic chuck on which the substrate is disposed; an edge ring provided along a circumference of the electrostatic chuck and supporting an edge region of the substrate; an adhesive gel pad provided between the electrostatic chuck and the edge ring; and a coating layer formed only on a surface of the edge ring, which is exposed to the plasma.