公开(公告)号：US20220216368A1

公开(公告)日：2022-07-07

申请号：US17527366

申请日：2021-11-16

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Ho Won JANG ,  Junsik HWANG ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  C30B25/04 ,  C30B25/18 ,  C30B29/40

Abstract: Provided are a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a substrate, a membrane bridge that defines, with the substrate, a plurality of cavities, and a nitride semiconductor layer arranged on the membrane bridge. The membrane bridge and the substrate have the same crystal structure. The membrane bridge has an upper surface with a constant height with respect to a surface of the substrate.

公开(公告)号：US20250169232A1

公开(公告)日：2025-05-22

申请号：US19028461

申请日：2025-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Euijoon YOON ,  Jongmyeong KIM ,  Jehong OH ,  Seungmin LEE ,  Jungel RYU

IPC: H10H20/818 ,  H01L25/075 ,  H10H20/821 ,  H10H20/825 ,  H10H20/857

Abstract: A display device with improved light-emitting efficiency is disclosed. The display device includes a plurality of pixels, a light emitting device provided in each of the pixels, the light emitting device having first and second surfaces which are opposite to each other, first and second electrodes electrically and respectively connected to the first and second surfaces of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern includes first and second regions. The first region encloses the second region, and the second region has a contact hole exposing at least a portion of the second surface. The second electrode is coupled to the second surface through the contact hole, and the first and second regions have crystalline phases different from each other.

公开(公告)号：US20210184070A1

公开(公告)日：2021-06-17

申请号：US16883363

申请日：2020-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Jungel RYU ,  Sungjin KANG ,  Jongmyeong KIM ,  Jehong OH ,  Euijoon YOON ,  Seungmin LEE ,  Junsik HWANG

IPC: H01L33/00 ,  H01L27/15

Abstract: A method of aligning micro LEDs and a method of manufacturing a micro LED display using the same are provided. The method of aligning micro LEDs includes providing micro LEDs, each having a first surface that has a first maximum width and a second surface opposite to the first surface and has a second maximum width that is greater than the first maximum width, providing a transfer substrate including a transfer mold that has an array of openings, each of the openings being configured to accommodate the first surface of a corresponding micro LED and not accommodate the second surface of the corresponding micro LED and aligning the micro LEDs in one direction in the openings of the transfer mold by inserting the micro LEDs into the openings of the transfer mold so that the first surface of each of the micro LEDs is positioned within a corresponding opening.

公开(公告)号：US20210159361A1

公开(公告)日：2021-05-27

申请号：US16845457

申请日：2020-04-10

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Sungjin KANG ,  Euijoon YOON ,  Junsik HWANG ,  Jongmyeong KIM ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE

IPC: H01L33/24 ,  H01L33/44 ,  H01L33/38 ,  H01L33/00 ,  H01L33/22 ,  H01L25/075

Abstract: Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.

公开(公告)号：US20240006554A1

公开(公告)日：2024-01-04

申请号：US18215377

申请日：2023-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Dongho KIM ,  Ho Won JANG ,  Kyungwook HWANG ,  Junsik HWANG ,  Sohyeon PARK ,  Jehong OH ,  Jungel RYU

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/40 ,  H01L33/42 ,  H01L33/08

CPC classification number: H01L33/24 ,  H01L33/385 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42 ,  H01L33/08

Abstract: A light-emitting device may include a plurality of light-emitting rods. Each of the plurality of light-emitting rods may include a first semiconductor layer having a rod shape, an active layer having a shell shape disposed about a plurality of surfaces of the first semiconductor layer, and a second semiconductor layer having a shell shape disposed about a plurality of surfaces of the active layer. The light emitting device may further include an insulating layer disposed in spaces between the plurality of light-emitting rods; a transparent electrode electrically connected to the first semiconductor layer of each of the plurality of light-emitting rods; and a reflective electrode electrically connected to the second semiconductor layer of each of the plurality of light-emitting rods.

公开(公告)号：US20220416123A1

公开(公告)日：2022-12-29

申请号：US17897821

申请日：2022-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Kyungwook HWANG ,  Sungjin KANG ,  Euijoon YOON ,  Junsik HWANG ,  Jongmyeong KIM ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/00 ,  H01L33/22 ,  H01L33/38 ,  H01L33/44

Abstract: Provided are a light-emitting diode (LED) device, a method of manufacturing the LED device, and a display apparatus including the LED device. The LED device includes a light-emitting layer having a core-shell structure, a passivation layer provided to cover a portion of a top surface of the first semiconductor layer, a first electrode provided on the light-emitting layer, and a second electrode provided under the light-emitting layer. The light-emitting layer includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first electrode is provided to contact the first semiconductor layer, and the second electrode is provided to contact the second semiconductor layer.

公开(公告)号：US20230299234A1

公开(公告)日：2023-09-21

申请号：US18303423

申请日：2023-04-19

Applicant: SAMSUNG ELECTRONICS CO.,LTD.

Inventor： Euijoon YOON ,  Jehong OH ,  Jungel RYU ,  Seungmin LEE ,  Jongmyeong KIM

IPC: H01L33/24 ,  H01L25/075 ,  H01L33/16 ,  H01L33/00 ,  H01L33/32

CPC classification number: H01L33/24 ,  H01L25/0753 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/32

Abstract: Disclosed are a display device and a manufacturing method thereof. The display device includes a plurality of pixels, a light emitting device provided in each of the plurality of pixels, the light emitting device having a first surface and a second surface, which are opposite to each other, a first electrode electrically connected to the first surface of the light emitting device, a second electrode electrically connected to the second surface of the light emitting device, and a metal oxide pattern interposed between the second surface of the light emitting device and the second electrode. The metal oxide pattern is provided to cover a portion of the second surface and to expose a remaining portion of the second surface. The second electrode is electrically connected to the exposed remaining portion of the second surface, and the metal oxide pattern includes single-crystalline or polycrystalline alumina.