公开(公告)号：US20230044888A1

公开(公告)日：2023-02-09

申请号：US17965911

申请日：2022-10-14

Applicant: SEMES CO., LTD.

Inventor： Yong-Jun SEO ,  Hyun YOON ,  Jungsuk GOH ,  Byeong Geun KIM ,  Yoonki SA ,  Doyeon KIM ,  Yerim YEON ,  Choonghyun LEE ,  Pil Kyun HEO ,  Youngje UM ,  Jaeseong LEE ,  Dongok AHN

IPC: H01L21/02 ,  H01L21/67

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.

公开(公告)号：US20210057239A1

公开(公告)日：2021-02-25

申请号：US16999836

申请日：2020-08-21

Applicant: SEMES CO., LTD.

Inventor： Junho KIM ,  Kyungsik SHIN ,  Youngseo AN ,  Jinki SHIN ,  Man Kyu KANG ,  Yoonki SA

IPC: H01L21/67 ,  H01L21/683

Abstract: An apparatus for treating a substrate includes a process chamber having a process space therein, a support unit that supports the substrate in the process space, a heating member that heats the substrate supported on the support unit, and an exhaust unit that evacuates the process space. The exhaust unit includes an exhaust duct and a heat retention unit having a retention space that retains heat released from the process space. The retention space surrounds an adjacent area located adjacent to the process chamber in the exhaust duct.

公开(公告)号：US20210050210A1

公开(公告)日：2021-02-18

申请号：US16993442

申请日：2020-08-14

Applicant: SEMES CO., LTD.

Inventor： Yong-Jun SEO ,  Hyun YOON ,  Jungsuk GOH ,  Byeong Geun KIM ,  Yoonki SA ,  Doyeon KIM ,  Yerim YEON ,  Choonghyun LEE ,  Pil Kyun HEO ,  Youngje UM ,  Jaeseong LEE ,  Dongok AHN

IPC: H01L21/02 ,  H01L21/67

Abstract: The inventive concept provides a method for treating a substrate. In an embodiment, the substrate treating method includes a treatment step of treating a residue on the substrate with a first fluid in a supercritical state and a second fluid in a supercritical state in a process space of a chamber, and the first fluid in the supercritical state and the second fluid in the supercritical state have different densities.