公开(公告)号：US20040214388A1

公开(公告)日：2004-10-28

申请号：US10852259

申请日：2004-05-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Tomoaki Moriwaka

IPC: G03F009/00

CPC classification number: G02B27/0983 ,  B23K26/0608 ,  B23K26/067 ,  B23K2101/40 ,  G02B5/09

Abstract: The laser irradiation apparatus of the present invention is configured to include a laser and at least two mirrors each having a concave surface for unidirectionally homogenizing an energy density of laser light emitted from the laser. A focal position of a first mirror exists between the first mirror and an irradiation surface. A focal position of a second mirror does not exist between the second mirror and the irradiation surface, but exists behind the irradiation surface. The laser irradiation apparatus thus configured enables laser irradiation of, for example, semiconductor films.

Abstract translation: 本发明的激光照射装置被配置为包括激光器和至少两个反射镜，每个反射镜具有用于使从激光器发射的激光的能量密度单向均匀的凹面。 在第一反射镜和照射表面之间存在第一反射镜的焦点位置。 第二反射镜与照射面之间不存在第二反射镜的焦点位置，但存在于照射面后方。 这样构成的激光照射装置能够实现例如半导体膜的激光照射。

公开(公告)号：US20040198072A1

公开(公告)日：2004-10-07

申请号：US10765865

申请日：2004-01-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hongyong Zhang ,  Koichiro Tanaka

IPC: H01L021/26

CPC classification number: H01L21/02686 ,  B23K26/06 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  B23K26/0732 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268

Abstract: In an annealing process of illuminating a semiconductor thin film with laser light, in the case where the laser illumination is performed at an energy level that is lower than an output energy range that allows a laser apparatus to operate most stably, the laser output is fixed somewhere in the above output energy range and the illumination energy is changed by inserting or removing a light attenuation filter into or from the laser illumination optical path. As a result, the time required for the laser processing can be shortened.

Abstract translation: 在用激光照射半导体薄膜的退火处理中，在能够使激光装置稳定运行的输出能量范围低的能量级进行激光照射的情况下，激光输出固定 在上述输出能量范围的某处，并且通过将光衰减滤光器插入到激光照射光路中或从激光照射光路中移除光衰减滤波器来改变照明能量。 结果，可以缩短激光加工所需的时间。

公开(公告)号：US20040191945A1

公开(公告)日：2004-09-30

申请号：US10816899

申请日：2004-04-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoaki Yamaguchi ,  Koichiro Tanaka ,  Satoshi Teramoto

IPC: H01L021/00

CPC classification number: C30B13/24 ,  Y10S117/904

Abstract: In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

公开(公告)号：US20040119955A1

公开(公告)日：2004-06-24

申请号：US10721075

申请日：2003-11-26

Applicant: Semiconductor Energy Laboratory Co. Ltd.

Inventor： Koichiro Tanaka

IPC: G03B027/48

CPC classification number: B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  G03B27/48

Abstract: It is an object to provide a laser irradiation apparatus for enlarging an area of a beam spot and reducing a proportion of a region with low crystallinity. It is also an object to provide a laser irradiation apparatus for enhancing throughput with a CW laser beam. Furthermore, it is an object to provide a laser irradiation method and a method for manufacturing a semiconductor device with the laser irradiation apparatus. A region melted by a first pulsed laser beam having harmonic is irradiated with a second CW laser beam. Specifically, the first laser beam has a wavelength of visible light or a shorter wavelength than that of visible light (approximately not more than 830 nm, preferably, not more than 780 nm). Since the first laser beam melts a semiconductor film, an absorption coefficient of the second laser beam to the semiconductor film increases drastically and thereby being more absorbable.

Abstract translation: 本发明的目的是提供一种激光照射装置，用于扩大光斑的面积并减少低结晶度的区域的比例。 本发明的另一个目的是提供一种激光照射装置，用于通过CW激光束增强产量。 此外，其目的在于提供一种激光照射方法及其制造方法。 由具有谐波的第一脉冲激光束熔化的区域被第二CW激光束照射。 具体地说，第一激光束具有可见光波长或比可见光波长短（大约不大于830nm，优选不大于780nm）。 由于第一激光束熔化半导体膜，所以第二激光束对半导体膜的吸收系数急剧增加，从而更可吸收。

公开(公告)号：US20040052279A1

公开(公告)日：2004-03-18

申请号：US10658472

申请日：2003-09-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu Miyairi ,  Akihisa Shimomura ,  Tamae Takano ,  Masaki Koyama ,  Koichiro Tanaka

IPC: H01S003/13 ,  H01S003/00

CPC classification number: H01S3/131 ,  B23K26/702

Abstract: It is an object to provide a laser apparatus, a laser irradiating method and a manufacturing method of a semiconductor device that make laser energy more stable. To attain the object, a part of laser beam emitted from an oscillator is sampled to generate an electric signal that contains as data energy fluctuation of a laser beam. The electric signal is subjected to signal processing to calculate the frequency, amplitude, and phase of the energy fluctuation of the laser beam. The transmittance of a light amount adjusting means is controlled in order that the transmittance changes in antiphase to the phase of the energy fluctuation of the laser beam and with an amplitude capable of reducing the amplitude of laser beam emitted from the oscillator, the control being made based on the phase difference between the phase of a signal that is in synchronization with oscillation of laser beam emitted from the oscillator and the phase calculated, on the energy ratio of the sampled laser beam to laser beam emitted from the oscillator, and on the frequency and amplitude calculated. In the light amount adjusting means, energy of the laser beam oscillated from the oscillator energy is adjusted.

Abstract translation: 本发明的目的是提供使激光能更稳定的半导体装置的激光装置，激光照射方法和制造方法。 为了达到该目的，从振荡器发射的激光束的一部分被采样以产生包含作为激光束的数据能量波动的电信号。 对信号进行信号处理，计算激光束的能量波动的频率，振幅和相位。 控制光量调节装置的透射率，以便透射率与激光束的能量波动的相位相反，并且能够减小从振荡器发射的激光束的振幅的振幅，进行控制 基于与从振荡器发射的激光束的振荡同步的信号的相位与计算的相位之间的相位差相对于从采样的激光束到从振荡器发射的激光束的能量比，以及频率 并计算振幅。 在光量调节装置中，调整从振荡器能量振荡的激光束的能量。

公开(公告)号：US20030190797A1

公开(公告)日：2003-10-09

申请号：US10406293

申请日：2003-04-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka ,  Tomoko Nakaya

IPC: H01L021/20 ,  H01L021/26

CPC classification number: H01L21/02678 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/067 ,  B23K26/0732 ,  B23K26/0738 ,  B23K2101/40 ,  G02B19/0028 ,  G02B19/0057 ,  G02B19/0095 ,  G02B27/09 ,  G02B27/0905 ,  G02B27/0961 ,  G02B27/0966 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01S3/005 ,  H01S5/005 ,  H01S5/4025

Abstract: There is provided an optical system for reducing faint interference observed when laser annealing is performed to a semiconductor film. The faint interference conventionally observed can be reduced by irradiating the semiconductor film with a laser beam by the use of an optical system using a mirror of the present invention. The optical system for transforming the shape of the laser beam on an irradiation surface into a linear or rectangular shape is used. The optical system may include an optical system serving to convert the laser beam into a parallel light with respect to a traveling direction of the laser beam. When the laser beam having passed through the optical system is irradiated to the semiconductor film through the mirror of the present invention, the conventionally observed faint interference can be reduced. Besides, the optical system which has been difficult to adjust can be simplified.

Abstract translation: 提供一种用于减少对半导体膜进行激光退火时观察到的微弱干涉的光学系统。 通过使用使用本发明的反射镜的光学系统通过用激光束照射半导体膜，可以减少常规观察到的微弱干扰。 使用用于将照射面上的激光束的形状变换为线状或矩形的光学系统。 光学系统可以包括用于将激光束相对于激光束的行进方向转换成平行光的光学系统。 当通过光学系统的激光束通过本发明的反射镜照射到半导体膜时，可以减少传统观察到的微弱干扰。 此外，可以简化难以调整的光学系统。

公开(公告)号：US20030134459A1

公开(公告)日：2003-07-17

申请号：US10353158

申请日：2003-01-27

Applicant: Semiconductor Energy Laboratory Co. Ltd., a Japan corporation

Inventor： Koichiro Tanaka ,  Hideto Ohnuma

IPC: H01L021/00

CPC classification number: H01L29/78621 ,  H01L29/66757

Abstract: A method for producing a thin-film transistor by using a crystalline silicon film that has been formed by using nickel as a metal element for accelerating crystallization of silicon. In forming source and drain regions, phosphorus as an element for gettering nickel is introduced therein by ion implantation. Nickel gettering is effected by annealing. For example, in the case of producing a P-channel thin-film transistor, both phosphorus and boron are used. Boron determines a conductivity type, and phosphorus is used as a gettering material.

Abstract translation: 通过使用通过使用镍作为加速硅的结晶的金属元素形成的结晶硅膜来制造薄膜晶体管的方法。 在形成源极和漏极区域中，通过离子注入引入作为吸杂镍的元素的磷。 镍的除气是通过退火进行的。 例如，在制造P沟道薄膜晶体管的情况下，使用磷和硼。 硼决定导电类型，磷用作吸气材料。

公开(公告)号：US20030024905A1

公开(公告)日：2003-02-06

申请号：US10207769

申请日：2002-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koichiro Tanaka

IPC: B23K026/00

CPC classification number: H01L21/02691 ,  B23K26/066 ,  B23K26/067 ,  B23K26/0676 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/10 ,  B23K2101/40 ,  H01L21/02678 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/2026 ,  H01S3/0071

Abstract: An object of the present invention is to provide a method and a device for constantly setting the energy distribution of a laser beam on an irradiating face, and uniformly irradiating the laser beam to the entire irradiating face. Further, another object of the present invention is to provide a manufacturing method of a semiconductor device including this laser irradiating method in a process. Therefore, the present invention is characterized in that the shapes of plural laser beams on the irradiating face are formed by an optical system in an elliptical shape or a rectangular shape, and the plural laser beams are irradiated while the irradiating face is moved in a first direction, and the plural laser beams are irradiated while the irradiating face is moved in a second direction and is moved in a direction reverse to the first direction. The plural laser beams may be irradiated while the irradiating face is moved in the first direction, and the plural laser beams may be irradiated while the irradiating face is moved in the direction reverse to the first direction, and the irradiating face may be also moved in the second direction.

Abstract translation: 本发明的目的是提供一种用于恒定地设定激光束在照射面上的能量分布的方法和装置，并且将激光束均匀地照射到整个照射面。 此外，本发明的另一个目的是提供一种包括该激光照射方法的半导体器件的制造方法。 因此，本发明的特征在于，照射面上的多个激光的形状由椭圆形或矩形的光学系统形成，并且在照射面在第一 方向，并且在照射面沿第二方向移动并沿与第一方向相反的方向移动时照射多个激光束。 可以在照射面沿第一方向移动的同时照射多个激光束，并且可以在照射面沿与第一方向相反的方向移动的同时照射多个激光束，并且照射面也可以在 第二个方向。

公开(公告)号：US20020045288A1

公开(公告)日：2002-04-18

申请号：US09930758

申请日：2001-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd, a Japanese corporation

Inventor： Shunpei Yamazaki ,  Koichiro Tanaka ,  Naoto Kusumoto

IPC: H01L021/00

CPC classification number: H01L21/02686 ,  B23K26/0738 ,  C30B13/24 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02691 ,  H01L21/2026 ,  H01L29/66757

Abstract: Laser annealing is performed by irradiating, while scanning, a semiconductor thin-film with laser light. The laser light that is linear on the irradiation surface is moved in its line-width direction and applied non-continuously. The laser light has, in its line-width direction, an energy density profile that assumes a step-like form in which the energy density varies in a step-like manner. In particular, the scanning pitch D and the step widths Ln are so set as to satisfy a relationship LnnullD.

Abstract translation: 通过用激光照射半导体薄膜，进行激光退火。 在照射面上呈线状的激光在其宽度方向上移动并非连续地施加。 激光在其宽度方向上具有呈阶梯状形式的能量密度分布，其中能量密度以阶梯状的方式变化。 特别地，扫描间距D和台阶宽度Ln被设定为满足关系Ln> = D。

公开(公告)号：US20020003666A1

公开(公告)日：2002-01-10

申请号：US09932769

申请日：2001-08-16

Applicant: Semiconductor Energy Laboratory Co., Ltd., a Japanese corporation

Inventor： Shunpei Yamazaki ,  Koichiro Tanaka ,  Satoshi Teramoto

IPC: G02B027/10

CPC classification number: G02B27/0905 ,  B23K26/0604 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/067 ,  B23K2101/40 ,  G02B27/09 ,  G02B27/0961 ,  G02B27/0966 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01S3/005 ,  H01S5/4025

Abstract: There are disposed two homogenizers for controlling an irradiation energy density in the longitudinal direction of a laser light transformed into a linear one which is inputtted into the surface to be irradiated. Also, there is disposed one homogenizer for controlling an irradiation energy density in a width direction of the linear laser light. According to this, the uniformity of laser annealing can be improved by the minimum number of homogenizers.

Abstract translation: 设置两个均质器，用于控制转换成被输入到待照射表面的直线激光的激光的纵向的照射能量密度。 另外，设置一个用于控制线性激光的宽度方向的照射能量密度的均质器。 因此，可以通过最小数量的均化器来提高激光退火的均匀性。