公开(公告)号：US20220285329A1

公开(公告)日：2022-09-08

申请号：US17826106

申请日：2022-05-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob SHIN ,  Ho Joon LEE ,  Seong Kyu JANG

IPC: H01L25/13 ,  H01L33/62 ,  H01L33/42 ,  H01L33/08

Abstract: A light emitting device for a display including a circuit board, a plurality of light emitting units arranged on the circuit board, each light emitting unit comprising a first LED stack including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer, a plurality of bump pads disposed between the plurality of light emitting units and the circuit board, and a bonding layer disposed between the second electrode and the circuit board, in which the second electrode has a side surface recessed inwardly with respect to a side surface of the light emitting unit to define a recessed portion, and the bonding layer is filled in the recessed portion.

公开(公告)号：US20220367427A1

公开(公告)日：2022-11-17

申请号：US17866249

申请日：2022-07-15

Applicant: Seoul Viosys Co., Ltd

Inventor： Seong Kyu JANG ,  Seom Geun LEE ,  Chan Seob SHIN ,  Ho Joon LEE

IPC: H01L25/075 ,  H01L33/58 ,  H01L33/00 ,  H01L33/62

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.

公开(公告)号：US20200295228A1

公开(公告)日：2020-09-17

申请号：US16815823

申请日：2020-03-11

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu JANG ,  Chan Seob SHIN ,  Seom Geun LEE ,  Ho Joon LEE

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075

Abstract: A light emitting device for a display including first, second, and third LED stacks, and bump pads disposed on the first LED stack, in which each LED stack includes a first semiconductor layer and a second semiconductor layer exposing a portion of the first semiconductor layer, the first LED stack includes upper through-holes and the second LED stack includes lower through-holes, the bump pads include a first bump pad electrically connected to the second semiconductor layer of the first LED stack, a second bump pad electrically connected to the second semiconductor layer of the second LED stack through the upper through-hole, a third bump pad electrically connected to the second semiconductor layer of the third LED stack through the upper through-hole and the lower through-hole, and a common bump pad electrically connected to the first semiconductor layers of each LED stack in common.

公开(公告)号：US20230071708A1

公开(公告)日：2023-03-09

申请号：US17983239

申请日：2022-11-08

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Gyu JANG ,  Chan Seob SHIN ,  Seom Geum LEE ,  Ho Joon Lee ,  Jong Hyeon CHAE

IPC: H01L33/62 ,  H01L33/52

Abstract: A light emitting device including first, second, and third light emitting parts one over another along a first direction, a first conductive pattern at least partially disposed between the second and third light emitting parts and including a first portion extending in a second direction perpendicular to the first direction and electrically coupled with the second light emitting part, and a second portion extending from one end of the first portion, a second conductive pattern disposed on and electrically coupled to the third light emitting part, and a first passivation covering the first light emitting part and including a first portion extending in the second direction and a second portion extending from one end of the first portion and forming an inclined angle with the second direction, in which the first conductive pattern at least partially overlaps with the second portion of the first passivation.

公开(公告)号：US20200258872A1

公开(公告)日：2020-08-13

申请号：US16782594

申请日：2020-02-05

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob SHIN ,  Ho Joon LEE ,  Seong Kyu JANG

IPC: H01L25/13 ,  H01L33/42 ,  H01L33/08 ,  H01L33/62

Abstract: A light emitting device for a display including first, second, and third LED stacks each including a first semiconductor layer, an active layer, and a second semiconductor layer, first, second, and third transparent electrodes in ohmic contact with a lower surface of the first LED stack, an upper surface of the second LED stack, and an upper surface of the third LED stack, respectively, a first electrode pad disposed on the first semiconductor layer of the third LED stack, a lower second electrode pad disposed on the third transparent electrode, and first, second, and third bump pads disposed on the first LED stack and electrically connected to the LED stacks, respectively, and a common bump pad disposed electrically connected to each LED stack, in which an upper surface of the first electrode pad is located at substantially the same elevation as that of the lower second electrode pad.

公开(公告)号：US20240105686A1

公开(公告)日：2024-03-28

申请号：US18535545

申请日：2023-12-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seong Kyu JANG ,  Seom Geun LEE ,  Chan Seob SHIN ,  Ho Joon LEE

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/58 ,  H01L33/62

CPC classification number: H01L25/0753 ,  H01L33/0093 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board and a second surface opposite to the first surface, a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, and a cover layer covering the second surface of the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices and has grooves in a region between adjacent light emitting devices, a portion of a top surface of the buffer material layer is disposed between adjacent light emitting devices, and the cover layer fills the grooves of the buffer material layer.

公开(公告)号：US20200343227A1

公开(公告)日：2020-10-29

申请号：US16855258

申请日：2020-04-22

Applicant: Seoul Viosys Co., Ltd

Inventor： Seong Kyu JANG ,  Seom Geun LEE ,  Chan Seob SHIN ,  Ho Joon LEE

IPC: H01L25/075 ,  H01L33/58 ,  H01L33/62 ,  H01L33/00

Abstract: A display panel including a circuit board having pads, light emitting devices electrically connected to the pads and arranged on the circuit board, each light emitting device having a first surface facing the circuit board, and a buffer material layer disposed between the circuit board and the light emitting devices to fill a space between the circuit board and the light emitting devices, in which the buffer material layer is disposed under the first surfaces of the light emitting devices

公开(公告)号：US20200176641A1

公开(公告)日：2020-06-04

申请号：US16705770

申请日：2019-12-06

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob SHIN ,  Myeong Hak YANG ,  Jin Woong LEE

IPC: H01L33/40 ,  H01L33/62 ,  H01L25/075

Abstract: A light emitting diode includes a first conductivity type semiconductor layer and a mesa disposed on the first conductivity type semiconductor layer wherein the mesa is a semiconductor stack including an active layer and a second conductivity type semiconductor layer; a ZnO layer disposed on the second conductivity type semiconductor layer; a lower insulation layer covering the ZnO layer and the mesa, and including an opening exposing the ZnO layer; a first pad metal layer disposed on the lower insulation layer, and electrically connected to the first conductivity type semiconductor layer; a second pad metal layer electrically connected to the ZnO layer through the opening of the lower insulation layer, and an upper insulation layer covering the first pad metal layer and the second pad metal layer.

公开(公告)号：US20250048793A1

公开(公告)日：2025-02-06

申请号：US18924883

申请日：2024-10-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu JANG ,  Chan Seob SHIN ,  Seom Geun LEE ,  Ho Joon LEE

IPC: H01L33/24 ,  G02B27/01 ,  G06F1/16 ,  H01L25/075 ,  H01L33/62

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

公开(公告)号：US20200035865A1

公开(公告)日：2020-01-30

申请号：US16518169

申请日：2019-07-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun LEE ,  Chan Seob SHIN

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/00

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.