公开(公告)号：US20140138702A1

公开(公告)日：2014-05-22

申请号：US14085876

申请日：2013-11-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Joo Won CHOI ,  Chang Yeon KIM ,  Jeong Hoon HEO ,  Young Wug KIM ,  Su Yeon HONG ,  Sang Wan RYU

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/02032 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract translation: 本发明的示例性实施方案提供了基材回收方法和再循环基材。 该方法包括将具有第一表面的衬底与外延层分离，使用电化学蚀刻来执行第一表面的第一蚀刻，以及在第一蚀刻之后，使用化学蚀刻，干蚀刻或 在第一次蚀刻之后进行第一表面的化学机械抛光。

公开(公告)号：US20160380149A1

公开(公告)日：2016-12-29

申请号：US15257139

申请日：2016-09-06

Applicant: Seoul Viosys Co., Ltd.

Inventor： Joo Won CHOI ,  Dong Sun Lee ,  Gyu Beom KIM ,  Sang Joon LEE

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/12 ,  H01L33/32 ,  H01S5/34333

Abstract: A light emitting diode includes an N-type GaN-based semiconductor compound layer, a P-type GaN-based semiconductor compound layer, and an active region disposed between the P-type and N-type layers, the active region comprising alternately laminated well layers and barrier layers. The well layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, the barrier layers comprise AlxInyGa1−(x+y)N, where 0≦x, y≦1, and at least one of the barrier layers comprises first and second layers having different compositions.

Abstract translation: 发光二极管包括N型GaN基半导体化合物层，P型GaN基半导体化合物层和设置在P型和N型层之间的有源区，活性区包括交替层叠的 层和阻挡层。 阱层包括Al x In y Ga 1-（x + y）N，其中0≤x，y≤1，势垒层包括Al x In y Ga 1-（x + y）N，其中0≤x，y≤1，以及至少一个 阻挡层包括具有不同组成的第一和第二层。