公开(公告)号：US20140138702A1

公开(公告)日：2014-05-22

申请号：US14085876

申请日：2013-11-21

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Joo Won CHOI ,  Chang Yeon KIM ,  Jeong Hoon HEO ,  Young Wug KIM ,  Su Yeon HONG ,  Sang Wan RYU

IPC: H01L21/02 ,  H01L29/20

CPC classification number: H01L21/02032 ,  H01L21/02013 ,  H01L21/02019 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0079

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract translation: 本发明的示例性实施方案提供了基材回收方法和再循环基材。 该方法包括将具有第一表面的衬底与外延层分离，使用电化学蚀刻来执行第一表面的第一蚀刻，以及在第一蚀刻之后，使用化学蚀刻，干蚀刻或 在第一次蚀刻之后进行第一表面的化学机械抛光。

公开(公告)号：US20140353582A1

公开(公告)日：2014-12-04

申请号：US14464179

申请日：2014-08-20

Applicant: Seoul Viosys Co., Ltd. ,  Mitsubishi Chemical Corporation

Inventor： Chang Yeon KIM ,  Dae Sung CHO ,  Ki Bum NAM ,  Young Wug KIM ,  Jong Kyun YOU ,  Kenji SHIMOYAMA ,  Takahide JOICHI ,  Kaori KURIHARA

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/387 ,  H01L33/44

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。