公开(公告)号：US20240096653A1

公开(公告)日：2024-03-21

申请号：US18469619

申请日：2023-09-19

申请人： SHIBAURA MECHATRONICS CORPORATION ,  KIOXIA CORPORATION

发明人： Kensuke DEMURA ,  Satoshi NAKAMURA ,  Masaya KAMIYA ,  Minami NAKAMURA ,  Kosuke TAKAI ,  Mana TANABE ,  Kaori UMEZAWA

IPC分类号： H01L21/67 ,  H01L21/02 ,  H01L21/687

CPC分类号： H01L21/67051 ,  H01L21/02052 ,  H01L21/67023 ,  H01L21/67109 ,  H01L21/68764

摘要： According to one embodiment a substrate treatment apparatus incorporates, into a frozen film, a contaminant adhered to a substrate surface by freezing a liquid film on the surface. The apparatus includes a placement part configured to rotate the substrate, a liquid supply part configured to supply a liquid via a nozzle to the frozen film including the contaminant, a moving part configured to move the nozzle parallel to the substrate surface, and a controller configured to control a rotation of the substrate by the placement part, a supply of the liquid by the liquid supply part, and a movement of the nozzle by the moving part. The controller rotates the substrate by controlling the placement part, supplies the liquid to the frozen film by controlling the liquid supply part, and moves the nozzle from a perimeter edge vicinity to a rotation center vicinity of the substrate by controlling the moving part.

公开(公告)号：US20240096652A1

公开(公告)日：2024-03-21

申请号：US18333572

申请日：2023-06-13

申请人： Kioxia Corporation

发明人： Mana TANABE ,  Kaori UMEZAWA ,  Kosuke TAKAI

IPC分类号： H01L21/67 ,  H01L21/687

CPC分类号： H01L21/67051 ,  H01L21/67034 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/68764

摘要： According to an embodiment, a substrate processing method includes forming a liquid film on a substrate including a first region provided with a first film on an outermost surface thereof and a second region provided with a second film on an outermost surface thereof, the first film and the second film being different from each other in material. The method further includes forming a solidified film by solidifying the liquid film. The method further includes causing the solidified film on the first region to melt prior to the solidified film on the second region.

公开(公告)号：US20220384218A1

公开(公告)日：2022-12-01

申请号：US17885362

申请日：2022-08-10

申请人： KIOXIA CORPORATION

发明人： Mana TANABE ,  Kosuke TAKAI ,  Kenji MASUI ,  Kaori UMEZAWA

IPC分类号： H01L21/67 ,  B08B7/00 ,  H01L21/02

摘要： A substrate processing method includes a process of cooling a substrate to below a freezing point of a processing liquid using a cooling fluid brought into contact with the substrate opposite. While the substrate is cooled to below the freezing point of the processing liquid, a droplet of processing liquid is dispensed onto a surface of the substrate at a specified location of a foreign substance. The droplet then forms a frozen droplet portion at the specified location. The frozen droplet portion is then thawed.