公开(公告)号：US10087550B2

公开(公告)日：2018-10-02

申请号：US15596728

申请日：2017-05-16

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Michael Ragan Krames

IPC: B32B3/02 ,  C30B25/18 ,  H01L29/20 ,  H01L29/04 ,  H01L29/36 ,  H01L21/78 ,  H01L31/00 ,  H01L33/32 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/00 ,  H01S5/30

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

公开(公告)号：USRE49677E1

公开(公告)日：2023-10-03

申请号：US17013487

申请日：2020-09-04

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Michael Ragan Krames

IPC: C30B25/18 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/78 ,  H01L29/04 ,  H01L29/20 ,  H01L29/36 ,  H01L31/00 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/32 ,  H01S5/30

CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L31/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/32 ,  H01S5/3013 ,  Y02E10/544

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.