公开(公告)号：US12041369B2

公开(公告)日：2024-07-16

申请号：US17906124

申请日：2021-01-26

Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION

Inventor： Satoshi Azuhata

IPC: H04N25/772 ,  H04N25/60 ,  H04N25/703 ,  H04N25/768

CPC classification number: H04N25/772 ,  H04N25/703 ,  H04N25/768 ,  H04N25/60

Abstract: In a solid-state imaging element that compares a reference signal and a pixel signal with each other, a frame rate is improved.
A differential amplifier circuit amplifies a difference in potential between a pair of input nodes and outputs the difference from an output node. A transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. A gate of a source follower transistor is connected to the floating diffusion layer, and a source thereof is connected to one of the pair of input nodes. A measurement unit measures a gate-source voltage of the source follower transistor and supplies a measured value. A correction arithmetic unit arithmetically calculates a correction value for correcting a potential of the other one of the pair of input nodes based on the measured value.

公开(公告)号：US12133008B2

公开(公告)日：2024-10-29

申请号：US17798460

申请日：2021-01-26

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Satoshi Azuhata

IPC: H04N25/75 ,  H04N25/768 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79

CPC classification number: H04N25/75 ,  H04N25/768 ,  H04N25/772 ,  H04N25/778 ,  H04N25/79

Abstract: To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.
The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.

公开(公告)号：US20230049629A1

公开(公告)日：2023-02-16

申请号：US17798460

申请日：2021-01-26

Applicant: Sony Semiconductor Solutions Corporation

Inventor： Satoshi Azuhata

IPC: H04N5/378 ,  H04N5/369 ,  H04N5/3745 ,  H04N5/374

Abstract: To improve a frame rate in a solid-state imaging element that compares a reference signal and a pixel signal.
The solid-state imaging element includes a differential amplifier circuit, a transfer transistor, and a source follower circuit. The differential amplifier circuit amplifies a difference between the potentials of a pair of input nodes and outputs the difference from an output node. The transfer transistor transfers charge from a photoelectric conversion element to a floating diffusion layer. The auto-zero transistor short-circuits the floating diffusion layer and the output node in a predetermined period. The source follower circuit supplies a potential to one of the pair of input nodes according to a potential of the floating diffusion layer.