X-ray weld inspection
    1.
    发明授权

    公开(公告)号:US12163902B2

    公开(公告)日:2024-12-10

    申请号:US17571511

    申请日:2020-07-08

    Abstract: An x-ray weld inspection apparatus has at least one x-ray source, at least one x-ray detector, a motor arrangement configured to move the at least one x-ray source and the at least one x-ray detector substantially along a weld, and a control device. The control device comprises memory and at least one processing core, configured to control the motor arrangement to move the at least one x-ray source and the at least one x-ray detector during an x-ray weld scan substantially along the direction of the weld. At least one section of the weld is imaged at least twice during a single x-ray scan, producing at least two imaging data sets, respectively. An angle of incidence of x-rays at the at least one section of the weld is different for the imaging data sets.

    TIME DELAY INTEGRATION SENSOR WITH PIXELS HAVING DIFFERENT SENSING ABILITY

    公开(公告)号:US20230353902A1

    公开(公告)日:2023-11-02

    申请号:US18350905

    申请日:2023-07-12

    Inventor: Ren-Chieh LIU

    CPC classification number: H04N25/768

    Abstract: The present disclosure provides a time delay integration (TDI) sensor using a rolling shutter. The TDI sensor includes multiple pixel columns. Each pixel column includes multiple pixels arranged in an along-track direction, wherein two adjacent pixels or two adjacent pixel groups in every pixel column have a separation space therebetween. The separation space is equal to a pixel height multiplied by a time ratio of a line time difference of the rolling shutter and a frame period, or equal to a summation of at least one pixel height and a multiplication of the pixel height by the time ratio of the line time difference and the frame period. The TDI sensor generates image frames using pixels having different sensing ability for a processor to perform image combination.

    IMAGE CAPTURING DEVICE
    4.
    发明申请

    公开(公告)号:US20240380997A1

    公开(公告)日:2024-11-14

    申请号:US18577773

    申请日:2022-03-16

    Abstract: An imaging device includes: a pixel unit having M (M is an integer of 2 or more) pixel arrays each including N (N is an integer of 2 or more) pixel portions; and M circuit units. Each circuit unit includes: N charge amplifiers; N A/D converters each including an addition processing portion for performing addition processing on voltage signals and a holding portion for holding an addition signal corresponding to an addition state of the addition processing portion; and a switch circuit for switching connection states between the charge amplifiers and the holding portions of the A/D converters. The switch circuit switches the connection state so that the holding portion for holding the addition signal corresponding to the charge signal output from the pixel portion is switched in accordance with the arrangement order of the N pixel portions.

    Imaging sensor having avalanche diode and control method of imaging sensor

    公开(公告)号:US12022220B2

    公开(公告)日:2024-06-25

    申请号:US18059275

    申请日:2022-11-28

    Inventor: Koki Honda

    CPC classification number: H04N25/768 H04N25/134

    Abstract: Among a plurality of time measurement circuits configured to measure a time until a pixel counter saturates in the imaging sensor having the signal multiplication pixel structure, at least one time measurement circuit functions as a time counter that obtains a time from the pixel counter starting count of pulses until saturation and the other time measurement circuits function as a difference counter that obtains a difference between a time until a certain pixel counter saturates and a time until another pixel counter different from the certain pixel counter saturates. Then, a time from the pixel counter associated with the time measurement circuit that functions as a difference counter starting count of the pulses until saturation is found by calculation processing.

    A METHOD AND APPARATUS FOR HIGH-SPEED CHARGE-COUPLED CMOS TDI IMAGING

    公开(公告)号:US20240022835A1

    公开(公告)日:2024-01-18

    申请号:US18025729

    申请日:2020-09-10

    CPC classification number: H04N25/77 H04N25/75 H04N25/768 H04N25/78

    Abstract: A method and apparatus (e.g. circuitry) provide high-speed charge-coupled CMOS TDI imaging based on the parallel readout operation of multiple TDI stages. A plurality (N) of output registers are reset and precharged globally in parallel ready to take charge transferred from the same number (N) of the TDI pixel registers. Each of the signal charges at respective output registers is converted to a signal voltage in parallel. Each of the analog signal voltages is then converted to a digital value in parallel by each of the number of the ADCs. The AD conversion is also performed in parallel while the next N number of the TDI registers is processed. The N output registers are linked to receive the charges from a beginning of the registers along to an end. Converting the respective signal voltages is performed by S/H capacitor array circuitry in a ping-pong fashion using CDS voltages.

    X-RAY WELD INSPECTION
    8.
    发明公开

    公开(公告)号:US20230349840A1

    公开(公告)日:2023-11-02

    申请号:US17571511

    申请日:2020-07-08

    Abstract: An x-ray weld inspection apparatus has at least one x-ray source, at least one x-ray detector, a motor arrangement configured to move the at least one x-ray source and the at least one x-ray detector substantially along a weld, and a control device. The control device comprises memory and at least one processing core, configured to control the motor arrangement to move the at least one x-ray source and the at least one x-ray detector during an x-ray weld scan substantially along the direction of the weld. At least one section of the weld is imaged at least twice during a single x-ray scan, producing at least two imaging data sets, respectively. An angle of incidence of x-rays at the at least one section of the weld is different for the imaging data sets.

    IMAGING DEVICE AND SEMICONDUCTOR MEMORY

    公开(公告)号:US20250039578A1

    公开(公告)日:2025-01-30

    申请号:US18708233

    申请日:2022-11-09

    Abstract: A storage unit included in each of pixels is miniaturized to increase the number of pixels per unit area.
    An imaging device includes a storage unit that stores a time code including a plurality of bits and corresponding to a pixel signal. The storage unit has a first inverter and a second inverter connected in a ring shape for each of the bits. The first inverter includes a first transistor that is of P-type and has a source connected to a first reference voltage node and a gate connected to an output node of the second inverter, a second transistor that is of P-type and has a source connected to a drain of the first transistor, a gate to which an inversion signal of a first control signal is input, and a drain connected to an output node of the first inverter, a third transistor that is of N-type and has a drain connected to the drain of the second transistor and a gate to which the first control signal is input, and a fourth transistor that is of N-type and has a drain connected to a source of the third transistor and a gate connected to a source connected to a second reference voltage node.

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