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    SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND DISTANCE MEASUREMENT DEVICE
    4.
    发明申请
    SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, AND DISTANCE MEASUREMENT DEVICE 有权

    公开(公告)号：US20230131491A1

    公开(公告)日：2023-04-27

    申请号：US18069683

    申请日：2022-12-21

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： Shigetaka KASUGA ,  Masaki TAMARU ,  Yugo NOSE

    IPC分类号： H04N25/77 ,  G01S17/894 ,  G01S7/4863 ,  H04N25/78 ,  H04N25/703 ,  H04N13/254

    摘要： A solid-state imaging device includes: pixels; a first sample-and-hold circuit provided per column and generating a first differential voltage that is a difference between a first reset voltage and a first signal voltage output from a first pixel disposed in a corresponding column among the pixels; a second sample-and-hold circuit provided per column and generating a second differential voltage that is a difference between a second reset voltage and a second signal voltage output from a second pixel disposed in the corresponding column among the pixels and different from the first pixel; and an A/D conversion circuit provided per column and converting, into digital signals, a first voltage based on the first differential voltage output from the first sample-and-hold circuit disposed in the corresponding column and a second voltage based on the second differential voltage output from the second sample-and-hold circuit disposed in the corresponding column.

    IMAGING DEVICE AND METHOD OF DRIVING IMAGING DEVICE
    7.
    发明公开
    IMAGING DEVICE AND METHOD OF DRIVING IMAGING DEVICE 审中-公开

    公开(公告)号：US20230353899A1

    公开(公告)日：2023-11-02

    申请号：US18349199

    申请日：2023-07-10

    申请人： Panasonic Intellectual Property Management Co., Ltd.

    发明人： MASAMI FUNABASHI

    IPC分类号： H04N25/65 ,  H04N25/78 ,  H04N25/77 ,  H04N25/703

    CPC分类号： H04N25/65 ,  H04N25/78 ,  H04N25/77 ,  H04N25/703

    摘要： An imaging device includes a semiconductor substrate, a photoelectric conversion layer located above the semiconductor substrate, a first signal detection transistor that includes a first gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the first gate electrode, a second signal detection transistor that includes a second gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the second gate electrode, a first contact plug in contact with the first gate electrode, and a second contact plug in contact with the second gate electrode. The first gate electrode is electrically connected to the photoelectric conversion layer through the first contact plug. The second gate electrode and the second contact plug are electrically insulated from the photoelectric conversion layer.

    SELF CALIBRATING BARRIER MODULATION PIXEL
    9.
    发明公开
    SELF CALIBRATING BARRIER MODULATION PIXEL 审中-公开

    公开(公告)号：US20240340547A1

    公开(公告)日：2024-10-10

    申请号：US18681721

    申请日：2022-08-10

    申请人： ams Sensors USA Inc. ,  ams Sensors Belgium BVBA

    发明人： Denver Lloyd ,  Scott Johnson ,  Adi Xhakoni

    IPC分类号： H04N25/59 ,  H04N25/53 ,  H04N25/616 ,  H04N25/703

    CPC分类号： H04N25/59 ,  H04N25/53 ,  H04N25/616 ,  H04N25/703

    摘要： In an embodiment a method for operating a pixel arrangement includes, during an exposure period, accumulating, by a photodetector, in a first integration period, charge carriers, pulsing, at an end of the first integration period, a transfer transistor to a first voltage level for transferring a portion of the accumulated charge carriers to a diffusion node, wherein the portion is configured to be drained to a supply voltage, continuing, by the photodetector, to accumulate, in a second integration period, charge carriers, after the second integration period, pulsing the transfer transistor to a respective further voltage level with at least one additional pulse, wherein, with each additional pulse, an additional portion of the accumulated charge carriers is configured to be drained to the supply voltage, and wherein each additional pulse is followed by an additional continued accumulation of charge carriers in a respective additional integration period with the photodetector.