公开(公告)号：US12021046B2

公开(公告)日：2024-06-25

申请号：US17944983

申请日：2022-09-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo Colpani ,  Samuele Sciarrillo ,  Ivan Venegoni ,  Francesco Maria Pipia ,  Simone Bossi ,  Carmela Cupeta

IPC: H01L23/00 ,  H01L21/02 ,  H01L21/768 ,  H01L23/528

CPC classification number: H01L24/03 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/76802 ,  H01L21/76877 ,  H01L23/528 ,  H01L24/05 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/0239 ,  H01L2224/024 ,  H01L2224/03464 ,  H01L2224/03614 ,  H01L2224/04042 ,  H01L2224/05024 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05664 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/0132 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/20102 ,  H01L2924/20103 ,  H01L2924/20104 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107

Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.

公开(公告)号：US11469194B2

公开(公告)日：2022-10-11

申请号：US16535029

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo Colpani ,  Samuele Sciarrillo ,  Ivan Venegoni ,  Francesco Maria Pipia ,  Simone Bossi ,  Carmela Cupeta

IPC: H01L23/00 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02

Abstract: A method of manufacturing a redistribution layer includes: forming an insulating layer on a wafer, delimited by a top surface and a bottom surface in contact with the wafer; forming a conductive body above the top surface of the insulating layer; forming a first coating region extending around and above the conductive body, in contact with the conductive body, and in contact with the top surface of the insulating layer in correspondence of a bottom surface of the first coating region; applying a thermal treatment to the wafer in order to modify a residual stress of the first coating region, forming a gap between the bottom surface of the first coating region and the top surface of the insulating layer; forming, after applying the thermal treatment, a second coating region extending around and above the first coating region, filling said gap and completely sealing the first coating region.