公开(公告)号：US10475673B2

公开(公告)日：2019-11-12

申请号：US15715940

申请日：2017-09-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ruggero Anzalone ,  Nicolo Frazzetto ,  Aldo Raciti ,  Marco Antonio Salanitri ,  Giuseppe Abbondanza ,  Giuseppe D'Arrigo

IPC: H01L21/67 ,  H01L21/02 ,  H01L21/687 ,  C23C16/32 ,  C23C16/458

Abstract: Various embodiments provide a reaction chamber including a support, a receptacle, and a sponge. The support includes a plurality of bars that are spaced from each other by a plurality of openings. Each of the bars has side surfaces that are slanted or tilted downward such that melted material may readily flow through the openings. The support is covered with a coating of silicon carbide to prevent materials from adhering to the support. The receptacle underlies the support and is configured to collect any melted material that is drained through the openings of the support. The sponge is positioned in the receptacle and under the support. The sponge is configured to absorb any melted material that is collected by the receptacle.

公开(公告)号：US11075172B2

公开(公告)日：2021-07-27

申请号：US16389849

申请日：2019-04-19

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Santo Alessandro Smerzi ,  Michele Calabretta ,  Alessandro Sitta ,  Crocifisso Marco Antonio Renna ,  Giuseppe D'Arrigo

IPC: H01L23/00 ,  H01L21/52 ,  H01L23/14 ,  H01L23/06 ,  H01L29/78

Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.

公开(公告)号：US11837558B2

公开(公告)日：2023-12-05

申请号：US17372115

申请日：2021-07-09

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Santo Alessandro Smerzi ,  Michele Calabretta ,  Alessandro Sitta ,  Crocifisso Marco Antonio Renna ,  Giuseppe D'Arrigo

IPC: H01L23/06 ,  H01L23/00 ,  H01L21/52 ,  H01L23/14 ,  H01L29/78

CPC classification number: H01L23/564 ,  H01L21/52 ,  H01L23/06 ,  H01L23/14 ,  H01L29/7842

Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.