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公开(公告)号：US09678027B2
公开(公告)日：2017-06-13
申请号：US14670613
申请日：2015-03-27
CPC分类号： G01N27/02 , G01M5/0033 , G01M5/0083 , G01N27/00 , H04Q9/00 , H04Q2209/88
摘要： A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.
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公开(公告)号：US11756916B2
公开(公告)日：2023-09-12
申请号：US17933016
申请日：2022-09-16
IPC分类号： H01L23/00 , B23K35/26 , C22C13/00 , H01L23/31 , H01L23/495 , B23K101/40
CPC分类号： H01L24/29 , B23K35/262 , C22C13/00 , H01L23/3121 , H01L23/49513 , H01L23/49541 , H01L23/49579 , H01L24/27 , H01L24/32 , H01L24/83 , B23K2101/40 , H01L24/48 , H01L24/73 , H01L2224/2912 , H01L2224/29105 , H01L2224/29109 , H01L2224/29111 , H01L2224/29139 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/48091 , H01L2224/48245 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/014 , H01L2924/20109
摘要： A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.
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公开(公告)号：US11075172B2
公开(公告)日：2021-07-27
申请号：US16389849
申请日：2019-04-19
发明人： Santo Alessandro Smerzi , Michele Calabretta , Alessandro Sitta , Crocifisso Marco Antonio Renna , Giuseppe D'Arrigo
摘要： A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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公开(公告)号：US20240272088A1
公开(公告)日：2024-08-15
申请号：US18168017
申请日：2023-02-13
发明人： Michele Calabretta , Francesco Rundo , Salvatore Coffa , Marco Alfio Torrisi , Riccardo Emanuele Sarpietro
CPC分类号： G01N21/9501 , G06T7/0004 , G06T2207/20081 , G06T2207/20084 , G06T2207/30148
摘要： In an embodiment, a method includes: capturing a first image of a power module, the power module including a power electronics circuit, the power electronics circuit including power semiconductor dies; identifying positions of the power semiconductor dies in the first image with a die detection model; extracting second images of the power semiconductor dies from the first image according to the positions of the power semiconductor dies in the first image; and identifying defects of the power semiconductor dies in the second images with a defect detection model, the defect detection model being different from the die detection model.
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公开(公告)号：US11837558B2
公开(公告)日：2023-12-05
申请号：US17372115
申请日：2021-07-09
发明人： Santo Alessandro Smerzi , Michele Calabretta , Alessandro Sitta , Crocifisso Marco Antonio Renna , Giuseppe D'Arrigo
CPC分类号： H01L23/564 , H01L21/52 , H01L23/06 , H01L23/14 , H01L29/7842
摘要： A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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公开(公告)号：US11482503B2
公开(公告)日：2022-10-25
申请号：US16811964
申请日：2020-03-06
IPC分类号： H01L23/00 , B23K35/26 , C22C13/00 , H01L23/31 , H01L23/495 , B23K101/40
摘要： A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.
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