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公开(公告)号：US20170356813A1
公开(公告)日：2017-12-14
申请号：US15437615
申请日：2017-02-21
Applicant: STMicroelectronics S.r.l.
Inventor： Santo Alessandro Smerzi
CPC classification number: G01L1/2262 , G01K7/16 , G01L1/18 , G01L1/2287 , G01L9/0052
Abstract: A MEMS pressure sensor includes a resistive sensing bridge with a first sensing resistor and a second sensing resistor, each having variable resistance values in response to change in a sensed physical variable. An oscillator generates an oscillation signal with a frequency or period that is a function of an oscillator control signal. A sensor reference module generates the oscillator control signal as a function of the resistance value of a resistor coupled therewith. This sensor reference module is couplable with the first sensing resistor or second sensing resistor. A processing circuit coupled to the oscillator provides a sensor signal indicative of the frequency or period of the oscillation signal. The sensor signal has first and second values with the sensor reference module coupled with the first sensing resistor and with the second sensing resistor, respectively, the first and second values being thus jointly indicative of the physical variable sensed.
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公开(公告)号：US11898943B2
公开(公告)日：2024-02-13
申请号：US17562829
申请日：2021-12-27
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Santo Alessandro Smerzi
CPC classification number: G01M5/0041 , G01L1/18 , G01L5/162
Abstract: A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.
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公开(公告)号：US10900849B2
公开(公告)日：2021-01-26
申请号：US16512912
申请日：2019-07-16
Applicant: STMicroelectronics S.r.l.
Inventor： Santo Alessandro Smerzi
Abstract: A sensing bridge includes first and second branches in parallel, the first branch including a first resistor in series with a first switch, the second branch including a second resistor in series with a second switch. Resistances of the resistors vary with a sensed physical variable. The branches switch between first and second phases, with the first switch closed and the second switch open during the first phase, and the first switch open and the second switch closed during the second phase. A reference block generates a control signal from the resistance of the variable resistors during the first and second phases. An oscillator generates an oscillating signal during the first and second phases from the variable sense current during the first and second phases. Processing circuitry determines a value of the sensed physical value from an algebraic combination of the oscillating signal during the first and second phases.
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Patent Agency Ranking
公开(公告)号：US11854977B2
公开(公告)日：2023-12-26
申请号：US16676371
申请日：2019-11-06
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro Smerzi , Maria Concetta Nicotra , Ferdinando Iucolano
IPC: H01L23/528 , H01L23/522 , H01L29/20 , H01L29/417 , H01L29/423
CPC classification number: H01L23/5286 , H01L23/5226 , H01L29/2003 , H01L29/41725 , H01L29/42316
Abstract: An electronic device, comprising plurality of source metal strips in a first metal level; a plurality of drain metal strips in the first metal level; a source metal bus in a second metal level above the first metal level; a drain metal bus, in the second metal level; a source pad, coupled to the source metal bus; and a drain pad, coupled to the drain metal bus. The source metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the first conductive pad; the drain metal bus includes subregions shaped in such a way that, in top-plan view, each of them has a width which decreases moving away from the second conductive pad. The first and second subregions are interdigitated.
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公开(公告)号：US11837558B2
公开(公告)日：2023-12-05
申请号：US17372115
申请日：2021-07-09
Applicant: STMICROELECTRONICS S.r.l.
Inventor： Santo Alessandro Smerzi , Michele Calabretta , Alessandro Sitta , Crocifisso Marco Antonio Renna , Giuseppe D'Arrigo
CPC classification number: H01L23/564 , H01L21/52 , H01L23/06 , H01L23/14 , H01L29/7842
Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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公开(公告)号：US10393601B2
公开(公告)日：2019-08-27
申请号：US15437615
申请日：2017-02-21
Applicant: STMicroelectronics S.r.l.
Inventor： Santo Alessandro Smerzi
Abstract: A MEMS pressure sensor includes a resistive sensing bridge with a first sensing resistor and a second sensing resistor, each having variable resistance values in response to change in a sensed physical variable. An oscillator generates an oscillation signal with a frequency or period that is a function of an oscillator control signal. A sensor reference module generates the oscillator control signal as a function of the resistance value of a resistor coupled therewith. This sensor reference module is couplable with the first sensing resistor or second sensing resistor. A processing circuit coupled to the oscillator provides a sensor signal indicative of the frequency or period of the oscillation signal. The sensor signal has first and second values with the sensor reference module coupled with the first sensing resistor and with the second sensing resistor, respectively, the first and second values being thus jointly indicative of the physical variable sensed.
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公开(公告)号：US11237077B2
公开(公告)日：2022-02-01
申请号：US16353965
申请日：2019-03-14
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro Smerzi
Abstract: A stress sensor includes: a substrate, having a face and a recess, open to the face; and a sensor chip of semiconductor material, housed in the recess and bonded to the substrate, the sensor chip being provided with a plurality of sensing components of piezoresistive material. The substrate has a thickness which is less by at least one order of magnitude with respect to a main dimension of the face. Further, the sensor chip has a thickness which is less by at least one order of magnitude with respect to the thickness of the substrate, and a Young's module of the substrate and a Young's module of the sensor chip are of the same order of magnitude.
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公开(公告)号：US11075172B2
公开(公告)日：2021-07-27
申请号：US16389849
申请日：2019-04-19
Applicant: STMICROELECTRONICS S.R.L.
Inventor： Santo Alessandro Smerzi , Michele Calabretta , Alessandro Sitta , Crocifisso Marco Antonio Renna , Giuseppe D'Arrigo
Abstract: A process for manufacturing a strained semiconductor device envisages: providing a die of semiconductor material, in which elementary components of the semiconductor device have been integrated by means of initial front-end steps; and coupling, using the die-attach technique, the die to a support, at a coupling temperature. The aforesaid coupling step envisages selecting the value of the coupling temperature at a value higher than an operating temperature of use of the semiconductor device, and moreover selecting the material of the support so that it is different from the material of the die in order to determine, at the operating temperature, a coupling stress that is a function of the different values of the coefficients of thermal expansion of the materials of the die and of the support and of the temperature difference between the coupling temperature and the operating temperature. Furthermore, additional stress can be enhanced by means of different embodiments involving the support, such as ring or multi-layer frame.
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