公开(公告)号：US11610933B2

公开(公告)日：2023-03-21

申请号：US17327364

申请日：2021-05-21

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Lalanne ,  Laurent Gay ,  Pascal Fonteneau ,  Yann Henrion ,  Francois Guyader

IPC: H01L27/146 ,  H01L21/768 ,  H01L21/02 ,  H01L21/306

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

公开(公告)号：US20190067342A1

公开(公告)日：2019-02-28

申请号：US16172044

申请日：2018-10-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent Gay ,  Francois Guyader

IPC: H01L27/144 ,  H01L27/146

CPC classification number: H01L27/1446 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14687

Abstract: An image sensor chip includes a semiconductor layer intended to receive illumination on a back face and comprising a matrix of pixels on a front face. An interconnection structure is arranged on the front face and a carrier is attached to the interconnection structure with a first face of the carrier facing the front face. An annular trench, arranged on a perimeter of the image sensor chip, extends from a second face of the carrier through an entire thickness of the carrier and into the interconnection structure. A via opening, arranged within the annual trench, extends from the second face of the carrier through the entire thickness of the carrier to reach a metal portion of the interconnection structure. The via opening an annual trench are lined with an insulating layer. The via opening include a metal conductor making an electrical connection to the metal portion.

公开(公告)号：US11901278B2

公开(公告)日：2024-02-13

申请号：US18095629

申请日：2023-01-11

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Jean-Pierre Carrere ,  Francois Guyader

IPC: H01L23/495 ,  H01L23/498 ,  H01L21/48 ,  H01L31/02

CPC classification number: H01L23/49822 ,  H01L21/4857 ,  H01L23/49894 ,  H01L31/02016

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

公开(公告)号：US11031433B2

公开(公告)日：2021-06-08

申请号：US16270989

申请日：2019-02-08

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Frederic Lalanne ,  Laurent Gay ,  Pascal Fonteneau ,  Yann Henrion ,  Francois Guyader

IPC: H01L27/146 ,  H01L21/02 ,  H01L21/306

Abstract: Image sensors and methods of manufacturing image sensors are provided herein. In an embodiment, a method of manufacturing an image sensor includes forming a structure having a front side and a back side. The structure includes a semiconductor layer extending between the front side and the back side of the structure, and a capacitive insulation wall extending through the semiconductor layer between the front side and the back side of the structure. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductive or semiconductor material. The method further includes selectively etching, from the back side of the structure, portions of the semiconductor layer and the region of conductive or semiconductor material, while retaining adjacent portions of the first and second insulating walls.

公开(公告)号：US12199131B2

公开(公告)日：2025-01-14

申请号：US17855521

申请日：2022-06-30

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent Gay ,  Frederic Lalanne ,  Yann Henrion ,  Francois Guyader ,  Pascal Fonteneau ,  Aurelien Seignard

IPC: H01L27/146

Abstract: Image sensors and methods of manufacturing image sensors are provided. One such method includes forming a structure that includes a semiconductor layer extending from a front side to a back side, and a capacitive insulation wall extending through the semiconductor layer. The capacitive insulation wall includes first and second insulating walls separated by a region of a conductor or a semiconductor material. Portions of the semiconductor layer and the region of the conductor or semiconductor material are selectively etched, and the first and second insulating walls have portions protruding outwardly beyond a back side of the semiconductor layer and of the region of the conductor or semiconductor material. A dielectric passivation layer is deposited on the back side of the structure, and portions of the dielectric passivation layer are locally removed on a back side of the protruding portions of the first and second insulating walls.

公开(公告)号：US12057461B2

公开(公告)日：2024-08-06

申请号：US18225298

申请日：2023-07-24

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

Inventor： Francois Guyader ,  Sara Pellegrini ,  Bruce Rae

IPC: H01L27/146 ,  G01J1/44 ,  H01L31/107 ,  H04N25/70

CPC classification number: H01L27/1461 ,  G01J1/44 ,  H01L27/14634 ,  H01L31/107 ,  H04N25/70 ,  G01J2001/4466

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

公开(公告)号：US11843008B2

公开(公告)日：2023-12-12

申请号：US17498286

申请日：2021-10-11

Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics (Research & Development) Limited

Inventor： Francois Guyader ,  Sara Pellegrini ,  Bruce Rae

IPC: H01L27/146 ,  G01J1/44 ,  H01L31/107 ,  H04N25/70

CPC classification number: H01L27/1461 ,  G01J1/44 ,  H01L27/14634 ,  H01L31/107 ,  H04N25/70 ,  G01J2001/4466

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.

公开(公告)号：US10446593B2

公开(公告)日：2019-10-15

申请号：US16172044

申请日：2018-10-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent Gay ,  Francois Guyader

IPC: H01L27/144 ,  H01L27/146

Abstract: An image sensor chip includes a semiconductor layer intended to receive illumination on a back face and comprising a matrix of pixels on a front face. An interconnection structure is arranged on the front face and a carrier is attached to the interconnection structure with a first face of the carrier facing the front face. An annular trench, arranged on a perimeter of the image sensor chip, extends from a second face of the carrier through an entire thickness of the carrier and into the interconnection structure. A via opening, arranged within the annual trench, extends from the second face of the carrier through the entire thickness of the carrier to reach a metal portion of the interconnection structure. The via opening an annual trench are lined with an insulating layer. The via opening include a metal conductor making an electrical connection to the metal portion.

公开(公告)号：US10362250B2

公开(公告)日：2019-07-23

申请号：US15985998

申请日：2018-05-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Francois Guyader ,  Francois Roy

IPC: H04N5/353 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

Abstract: A global shutter image sensor of a back-illuminated type includes a semiconductor substrate and pixels. Each pixel includes a photosensitive area, a storage area, a readout area and areas for transferring charges between these different areas. The image sensor includes, for each pixel, a protector extending at least partly into the substrate from the back of the substrate to ensure that the storage area is protected against back illumination.

公开(公告)号：US10147748B2

公开(公告)日：2018-12-04

申请号：US15600962

申请日：2017-05-22

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Laurent Gay ,  Francois Guyader

IPC: H01L27/144 ,  H01L27/146

Abstract: An image sensor chip includes a semiconductor layer intended to receive illumination on a back face and comprising a matrix of pixels on a front face. An interconnection structure is arranged on the front face and a carrier is attached to the interconnection structure with a first face of the carrier facing the front face. An annular trench, arranged on a perimeter of the image sensor chip, extends from a second face of the carrier through an entire thickness of the carrier and into the interconnection structure. A via opening, arranged within the annual trench, extends from the second face of the carrier through the entire thickness of the carrier to reach a metal portion of the interconnection structure. The via opening an annual trench are lined with an insulating layer. The via opening include a metal conductor making an electrical connection to the metal portion.