公开(公告)号：US11817353B2

公开(公告)日：2023-11-14

申请号：US17568500

申请日：2022-01-04

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal Chevalier ,  Alexis Gauthier ,  Gregory Avenier

IPC: H01L21/8222 ,  H01L21/265 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93

CPC classification number: H01L21/8222 ,  H01L21/26513 ,  H01L27/0664 ,  H01L29/0649 ,  H01L29/66174 ,  H01L29/66242 ,  H01L29/7371 ,  H01L29/93

Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.

公开(公告)号：US11276752B2

公开(公告)日：2022-03-15

申请号：US16995054

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US11984360B2

公开(公告)日：2024-05-14

申请号：US17728088

申请日：2022-04-25

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gregory Avenier ,  Alexis Gauthier ,  Pascal Chevalier

IPC: H01L21/82 ,  H01L21/3105 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93

CPC classification number: H01L21/8222 ,  H01L21/31056 ,  H01L21/8249 ,  H01L27/0664 ,  H01L29/66174 ,  H01L29/66242 ,  H01L29/7371 ,  H01L29/93

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

公开(公告)号：US11348834B2

公开(公告)日：2022-05-31

申请号：US16909333

申请日：2020-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Gregory Avenier ,  Alexis Gauthier ,  Pascal Chevalier

IPC: H01L21/20 ,  H01L21/8222 ,  H01L27/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93 ,  H01L21/3105 ,  H01L21/8249

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

公开(公告)号：US20180197781A1

公开(公告)日：2018-07-12

申请号：US15911709

申请日：2018-03-05

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal Chevalier ,  Gregory Avenier

IPC: H01L21/8228 ,  H01L29/06 ,  H01L27/102 ,  H01L21/311 ,  H01L21/285 ,  H01L21/02 ,  H01L21/265 ,  H01L21/761

CPC classification number: H01L21/82285 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/26513 ,  H01L21/28518 ,  H01L21/31111 ,  H01L21/761 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0826 ,  H01L27/1022 ,  H01L29/0646 ,  H01L29/0649 ,  H01L29/0804 ,  H01L29/0821 ,  H01L29/42304 ,  H01L29/66272 ,  H01L29/732

Abstract: A PNP transistor is manufactured in parallel with the manufacture of NPN, NMOS, and PMOS transistors. A first semiconductor layer is deposited on a P-type doped semiconductor substrate and divided into first, second, and third regions, with the third region forming the base. An insulating well is deeply implanted into the substrate. First and second third wells, respectively of N-type and P-type are formed to extend between the second region and third region and the insulating well. A third well of P-type is formed below the third region to provide the collector. Insulating layers are deposited over the third region and patterned to form an opening. Epitaxial growth of a second P-type doped semiconductor layer is performed in the opening to provide the emitter.

公开(公告)号：US11776995B2

公开(公告)日：2023-10-03

申请号：US17734486

申请日：2022-05-02

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/0642 ,  H01L21/8222 ,  H01L29/6634 ,  H01L29/7322

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US11804521B2

公开(公告)日：2023-10-31

申请号：US17584593

申请日：2022-01-26

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/732

CPC classification number: H01L29/0642 ,  H01L29/66234 ,  H01L29/7322

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

公开(公告)号：US11355581B2

公开(公告)日：2022-06-07

申请号：US16995079

申请日：2020-08-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L29/06 ,  H01L21/8222 ,  H01L29/66 ,  H01L29/732

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

公开(公告)号：US10468508B2

公开(公告)日：2019-11-05

申请号：US16250182

申请日：2019-01-17

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Alexis Gauthier ,  Pascal Chevalier ,  Gregory Avenier

IPC: H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109 ,  H01L29/732 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/10 ,  H01L21/3105 ,  H01L29/737

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector contact region. A first epitaxial region forms a collector region of a first conductivity type on the collector contact region. A second epitaxial region forms a base region of a second conductivity type. Deposited semiconductor material forms an emitter region of the first conductivity type. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

公开(公告)号：US11251084B2

公开(公告)日：2022-02-15

申请号：US16909378

申请日：2020-06-23

Applicant: STMicroelectronics (Crolles 2) SAS

Inventor： Pascal Chevalier ,  Alexis Gauthier ,  Gregory Avenier

IPC: H01L21/8222 ,  H01L21/265 ,  H01L27/06 ,  H01L29/06 ,  H01L29/66 ,  H01L29/737 ,  H01L29/93

Abstract: At least one bipolar transistor and at least one variable capacitance diode are jointly produced by a method on a common substrate.