公开(公告)号：US09793257B1

公开(公告)日：2017-10-17

申请号：US15252964

申请日：2016-08-31

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Arnaud Florence

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/866 ,  H01L49/02 ,  H01L23/31

CPC classification number: H01L27/0248 ,  H01L23/3114 ,  H01L27/0255 ,  H01L27/0676 ,  H01L28/40 ,  H01L29/866

Abstract: An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.

公开(公告)号：US11810911B2

公开(公告)日：2023-11-07

申请号：US16897205

申请日：2020-06-09

Applicant: STMICROELECTRONICS APPLICATION GMBH ,  STMICROELECTRONICS (TOURS) SAS

Inventor： Mathieu Rouviere ,  Arnaud Yvon ,  Mohamed Saadna ,  Vladimir Scarpa

IPC: H01L27/06 ,  H01L21/02 ,  H01L21/8252 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66 ,  H01L29/778 ,  H01L29/872

CPC classification number: H01L27/0629 ,  H01L21/0254 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/40 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

Abstract: A monolithic component includes a field-effect power transistor and at least one first Schottky diode inside and on top of a gallium nitride substrate.

公开(公告)号：US11152783B2

公开(公告)日：2021-10-19

申请号：US16358964

申请日：2019-03-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere

IPC: H02H9/04 ,  H01L27/02 ,  H01L27/06

Abstract: A circuit for protecting against electrostatic discharges includes two avalanche circuit components having different turn-on delays with respect to a beginning of an electrostatic discharge. The two avalanche circuit components are coupled in parallel. The avalanche circuit component closer to an output node has a turn-on delay on the order of 30 ns, while the avalanche circuit component closer to an input node has a turn-on delay on the order of 1 ns.

公开(公告)号：US10243356B2

公开(公告)日：2019-03-26

申请号：US14925001

申请日：2015-10-28

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Jérôme Heurtier ,  Guillaume Bougrine ,  Mathieu Rouviere

IPC: H02H9/00 ,  H02H9/04

Abstract: A device may be for protection against overvoltages in a power supply line. The device may include a breakover diode, an avalanche diode coupled in series with the breakover diode, and a switch coupled in parallel with the breakover diode and the avalanche diode. The device may also include a circuit coupled across the avalanche diode and configured to control the switch.

公开(公告)号：US20170287893A1

公开(公告)日：2017-10-05

申请号：US15252964

申请日：2016-08-31

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Arnaud Florence

IPC: H01L27/02 ,  H01L23/31 ,  H01L49/02 ,  H01L27/06 ,  H01L29/866

CPC classification number: H01L27/0248 ,  H01L23/3114 ,  H01L27/0255 ,  H01L27/0676 ,  H01L28/40 ,  H01L29/866

Abstract: An electrostatic discharge protection device includes first and second diodes series-connected between first and second connection terminals. A third connection terminal is coupled to a junction of the first and second diodes. A capacitor is connected in parallel with the first and second diodes between the first and second terminals.

公开(公告)号：US09685778B2

公开(公告)日：2017-06-20

申请号：US14725342

申请日：2015-05-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Laurent Moindron ,  Christian Ballon

IPC: H02H3/20 ,  H01L29/732 ,  H01L27/07 ,  H01L29/87 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC classification number: H02H3/20 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0629 ,  H01L27/0761 ,  H01L28/20 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/7395 ,  H01L29/7827 ,  H01L29/87 ,  H01L29/872

Abstract: An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

公开(公告)号：US20150380925A1

公开(公告)日：2015-12-31

申请号：US14725342

申请日：2015-05-29

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mathieu Rouviere ,  Laurent Moindron ,  Christian Ballon

IPC: H02H3/20 ,  H01L27/06 ,  H01L27/02 ,  H01L29/739 ,  H01L49/02 ,  H01L29/872 ,  H01L29/78

CPC classification number: H02H3/20 ,  H01L27/0248 ,  H01L27/0262 ,  H01L27/0629 ,  H01L27/0761 ,  H01L28/20 ,  H01L29/732 ,  H01L29/7322 ,  H01L29/7395 ,  H01L29/7827 ,  H01L29/87 ,  H01L29/872

Abstract: An integrated circuit includes a vertical Shockley diode and a first vertical transistor. The diode is formed by, from top to bottom of a semiconductor substrate, a first region of a first conductivity type, a substrate of a second conductivity type, and a second region of the first conductivity type having a third region of the second conductivity type formed therein. The vertical transistor is formed by, also from top to bottom, a portion of the second region and a fourth region of the second conductivity type. The third and fourth regions are electrically connected to each other.

Abstract translation: 集成电路包括垂直Shockley二极管和第一垂直晶体管。 二极管由半导体衬底的顶部到底部形成第一导电类型的第一区域，第二导电类型的衬底和具有第二导电类型的第三区域的第一导电类型的第二区域 在其中形成。 垂直晶体管也是从顶部到底部形成第二区域的一部分和第二导电类型的第四区域。 第三和第四区域彼此电连接。