公开(公告)号：US20150175410A1

公开(公告)日：2015-06-25

申请号：US14133290

申请日：2013-12-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

IPC: B81C1/00

CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

公开(公告)号：US11696504B2

公开(公告)日：2023-07-04

申请号：US17321252

申请日：2021-05-14

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Lucia Zullino ,  Andrea Nomellini ,  Luca Seghizzi ,  Luca Zanotti ,  Bruno Murari ,  Martina Scolari

IPC: H10N10/855 ,  H10N10/01 ,  H10N10/17

CPC classification number: H10N10/855 ,  H10N10/01 ,  H10N10/17

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectrically active elements, and forming an input electrical terminal and an output electrical terminal electrically connected to the electrically conductive interconnections, wherein the first thermoelectric semiconductor material and the second thermoelectric semiconductor material comprise Silicon-based materials selected among porous Silicon or polycrystalline SiGe or polycrystalline Silicon.

公开(公告)号：US09061248B1

公开(公告)日：2015-06-23

申请号：US14133290

申请日：2013-12-18

Applicant: STMicroelectronics S.r.l.

Inventor： Marco Ferrera ,  Matteo Perletti ,  Igor Varisco ,  Luca Zanotti

IPC: H01L21/00 ,  B01D67/00 ,  B01D71/02 ,  B01L3/00 ,  F04B19/00

CPC classification number: B81C1/00119 ,  B01D67/0062 ,  B01D71/02 ,  B01D2325/021 ,  B01D2325/028 ,  B01L3/502707 ,  B01L3/502753 ,  B01L2300/0681 ,  B81B2201/10 ,  B81C1/00071 ,  B81C1/00087 ,  B81C2201/0133 ,  B81C2201/0157 ,  F04B19/006

Abstract: A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.

Abstract translation: 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面的部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。

公开(公告)号：US11871668B2

公开(公告)日：2024-01-09

申请号：US17158904

申请日：2021-01-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Paolo Ferrari ,  Flavio Francesco Villa ,  Luca Zanotti ,  Andrea Nomellini ,  Luca Seghizzi

IPC: H10N10/17 ,  H10N10/01

CPC classification number: H10N10/17 ,  H10N10/01

Abstract: A thermoelectric generator includes a substrate and one or more thermoelectric elements on the substrate and each configured to convert a thermal drop across the thermoelectric elements into an electric potential by Seebeck effect. The thermoelectric generator includes a cavity between the substrate and the thermoelectric elements. The thermoelectric generator includes, within the cavity, a support structure for supporting the thermoelectric elements. The support structure has a thermal conductivity lower than a thermal conductivity of the substrate.