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公开(公告)号：US10941880B2
公开(公告)日：2021-03-09
申请号：US16295410
申请日：2019-03-07
摘要： A valve module includes a semiconductor body, cavities in the semiconductor body separated from each other by a distance, a cantilever structure suspended over each cavity to enable at least partial closing of the cavity, and a piezoelectric actuator for each cantilever structure. The piezoelectric actuator is configured for use to cause a positive bending of the respective cantilever structure and so modulate a rate of air flow through the valve module.
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2.发明授权Process for manufacturing a micromechanical structure having a buried area provided with a filter 有权具有设置有过滤器的掩埋区域的微机械结构的制造方法公开(公告)号：US09061248B1
公开(公告)日：2015-06-23
申请号：US14133290
申请日：2013-12-18
发明人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
CPC分类号： B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
摘要： A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.
摘要翻译： 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面的部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。
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3.发明授权公开(公告)号：US10433068B2
公开(公告)日：2019-10-01
申请号：US15365590
申请日：2016-11-30
发明人： Matteo Perletti , Igor Varisco , Luca Lamagna , Silvia Adorno , Gabriele Gattere , Carlo Valzasina , Sebastiano Conti
摘要： A MEMS acoustic transducer provided with: a substrate of semiconductor material, having a back surface and a front surface opposite with respect to a vertical direction; a first cavity formed within the substrate, which extends from the back surface to the front surface; a membrane which is arranged at the upper surface, suspended above the first cavity and anchored along a perimeter thereof to the substrate; and a combfingered electrode arrangement including a number of mobile electrodes coupled to the membrane and a number of fixed electrodes coupled to the substrate and facing respective mobile electrodes for forming a sensing capacitor, wherein a deformation of the membrane as a result of incident acoustic pressure waves causes a capacitive variation of the sensing capacitor. In particular, the combfingered electrode arrangement lies vertically with respect to the membrane and extends parallel thereto.
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4.发明申请PROCESS FOR MANUFACTURING A MICROMECHANICAL STRUCTURE HAVING A BURIED AREA PROVIDED WITH A FILTER 审中-公开制造具有过滤器的烧结区域的微观结构的方法公开(公告)号：US20150175410A1
公开(公告)日：2015-06-25
申请号：US14133290
申请日：2013-12-18
发明人： Marco Ferrera , Matteo Perletti , Igor Varisco , Luca Zanotti
IPC分类号： B81C1/00
CPC分类号： B81C1/00119 , B01D67/0062 , B01D71/02 , B01D2325/021 , B01D2325/028 , B01L3/502707 , B01L3/502753 , B01L2300/0681 , B81B2201/10 , B81C1/00071 , B81C1/00087 , B81C2201/0133 , B81C2201/0157 , F04B19/006
摘要： A process for manufacturing a micromechanical structure envisages: forming a buried cavity within a body of semiconductor material, separated from a top surface of the body by a first surface layer; and forming an access duct for fluid communication between the buried cavity and an external environment. The method envisages: forming an etching mask on the top surface at a first access area; forming a second surface layer on the top surface and on the etching mask; carrying out an etch such as to remove, in a position corresponding to the first access area, a portion of the second surface layer, and an underlying portion of the first surface layer not covered by the etching mask until the buried cavity is reached, thus forming both the first access duct and a filter element, set between the first access duct and the same buried cavity.
摘要翻译： 微机械结构的制造方法设想：在半导体材料体内形成通过第一表面层从主体顶表面分离的掩埋腔; 以及形成用于在所述掩埋腔和外部环境之间流体连通的进入管。 该方法设想：在第一进入区域的顶表面上形成蚀刻掩模; 在顶表面和蚀刻掩模上形成第二表面层; 进行蚀刻，以在对应于第一进入区域的位置中移除第二表面层的一部分，以及未被蚀刻掩模覆盖的第一表面层的下面部分，直到达到掩埋空腔，因此 形成第一进入管道和过滤元件，设置在第一进入管道和相同的掩埋空腔之间。
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5.发明授权公开(公告)号：US08998388B2
公开(公告)日：2015-04-07
申请号：US14253276
申请日：2014-04-15
发明人： Mauro Cattaneo , Roberto Campedelli , Igor Varisco
CPC分类号： B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2002/1437 , Y10T29/49401
摘要： A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.
摘要翻译： 一种制造流体喷射装置的方法，包括以下步骤：提供具有膜层的第一半导体主体和在膜层上延伸的压电致动器; 在膜层下方形成空腔以形成悬浮膜; 提供第二半导体本体; 在所述第二半导体本体中形成入口通孔，所述入口通孔被构造成形成所述流体喷射装置的供应通道; 提供第三半导体体; 在所述第三半导体主体中形成凹部; 形成通过所述第三半导体主体的出口通道以形成所述流体喷射装置的喷嘴; 将第一半导体本体与第三半导体本体和第一半导体本体与第二半导体本体耦合，使得压电致动器完全容纳在第一凹部中，并且第二凹部形成流体喷射装置的内部腔室。
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公开(公告)号：US11440794B2
公开(公告)日：2022-09-13
申请号：US16565803
申请日：2019-09-10
摘要： A bottom semiconductor region is formed to include a main sub-region, extending through a bottom dielectric region that coats a semiconductor wafer, and a secondary sub-region which coats the bottom dielectric region and surrounds the main sub-region. First and second top cavities are formed through the wafer, delimiting a fixed body and a patterned structure that includes a central portion which contacts the main sub-region, and deformable portions in contact with the bottom dielectric region. A bottom cavity is formed through the bottom semiconductor region, as far as the bottom dielectric region, the bottom cavity laterally delimiting a stiffening region including the main sub-region and leaving exposed parts of the bottom dielectric region that contact the deformable portions and parts of the bottom dielectric region that delimit the first and second top cavities. The parts left exposed by the bottom cavity are selectively removed.
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7.发明申请公开(公告)号：US20140313264A1
公开(公告)日：2014-10-23
申请号：US14253276
申请日：2014-04-15
发明人： Mauro Cattaneo , Roberto Campedelli , Igor Varisco
IPC分类号： B41J2/045
CPC分类号： B41J2/045 , B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1631 , B41J2002/1437 , Y10T29/49401
摘要： A method for manufacturing a fluid ejection device, comprising the steps of: providing a first semiconductor body having a membrane layer and a piezoelectric actuator which extends over the membrane layer; forming a cavity underneath the membrane layer to form a suspended membrane; providing a second semiconductor body; making, in the second semiconductor body, an inlet through hole configured to form a supply channel of the fluid ejection device; providing a third semiconductor body; forming a recess in the third semiconductor body; forming an outlet channel through the third semiconductor body to form an ejection nozzle of the fluid ejection device; coupling the first semiconductor body with the third semiconductor body and the first semiconductor body with the second semiconductor body in such a way that the piezoelectric actuator is completely housed in the first recess, and the second recess forms an internal chamber of the fluid ejection device.
摘要翻译： 一种制造流体喷射装置的方法，包括以下步骤：提供具有膜层的第一半导体主体和在膜层上延伸的压电致动器; 在膜层下方形成空腔以形成悬浮膜; 提供第二半导体本体; 在所述第二半导体本体中形成入口通孔，所述入口通孔被构造成形成所述流体喷射装置的供应通道; 提供第三半导体体; 在所述第三半导体本体中形成凹部; 形成通过所述第三半导体主体的出口通道以形成所述流体喷射装置的喷嘴; 将第一半导体本体与第三半导体本体和第一半导体本体与第二半导体本体耦合，使得压电致动器完全容纳在第一凹部中，并且第二凹部形成流体喷射装置的内部腔室。
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