公开(公告)号：US11961933B2

公开(公告)日：2024-04-16

申请号：US17534159

申请日：2021-11-23

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

CPC classification number: H01L31/1075 ,  H01L27/1443 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US11189744B2

公开(公告)日：2021-11-30

申请号：US16508039

申请日：2019-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/07 ,  H01L31/107 ,  H01L27/144 ,  H01L31/0352 ,  H01L31/18

Abstract: In at least one embodiment, a Geiger-mode avalanche photodiode, including a semiconductor body, is provided. The semiconductor body includes a semiconductive structure and a front epitaxial layer on the semiconductive structure. The front epitaxial layer has a first conductivity type. An anode region having a second conductivity type that is different from the first conductivity type extends into the front epitaxial layer. The photodiode further includes a plurality of gettering regions in the semiconductive structure.

公开(公告)号：US20200052147A1

公开(公告)日：2020-02-13

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US09978802B2

公开(公告)日：2018-05-22

申请号：US15346578

申请日：2016-11-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L27/146 ,  H01L31/02 ,  G01N21/25 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14645 ,  G01N21/251 ,  H01L27/1443 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/02027 ,  H01L31/022408 ,  H01L31/107

Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

公开(公告)号：US20170365636A1

公开(公告)日：2017-12-21

申请号：US15346578

申请日：2016-11-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L27/146 ,  H01L31/02 ,  G01N21/25 ,  H01L31/107 ,  H01L31/0224

CPC classification number: H01L27/14645 ,  G01N21/251 ,  H01L27/1443 ,  H01L27/14607 ,  H01L27/1461 ,  H01L27/1463 ,  H01L27/14647 ,  H01L27/14689 ,  H01L31/02027 ,  H01L31/022408 ,  H01L31/107

Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

公开(公告)号：US11049990B2

公开(公告)日：2021-06-29

申请号：US16535026

申请日：2019-08-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino ,  Antonella Sciuto

IPC: H01L31/12 ,  H01L33/06 ,  H01L31/18 ,  H01L33/32 ,  H01L33/00 ,  H01L33/12 ,  H01L31/107 ,  H01L31/0376 ,  H01L33/34

Abstract: An optoelectronic device with a semiconductor body that includes: a bottom cathode structure, formed by a bottom semiconductor material, and having a first type of conductivity; and a buffer region, arranged on the bottom cathode structure and formed by a buffer semiconductor material different from the bottom semiconductor material. The optoelectronic device further includes: a receiver comprising a receiver anode region, which is formed by the bottom semiconductor material, has a second type of conductivity, and extends in the bottom cathode structure; and an emitter, which is arranged on the buffer region and includes a semiconductor junction formed at least in part by a top semiconductor material, different from the bottom semiconductor material.

公开(公告)号：US10797196B2

公开(公告)日：2020-10-06

申请号：US16386163

申请日：2019-04-16

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Massimo Cataldo Mazzillo ,  Valeria Cinnera Martino

IPC: H01L31/14 ,  H01L27/14 ,  H01L31/024 ,  H01L31/0216 ,  H01L31/107 ,  H01L31/18 ,  G01J1/44 ,  H01L31/0352 ,  H01L27/144

Abstract: A photodetector includes a Geiger mode avalanche photodiode, which includes a body of semiconductor material, which is delimited by a front surface. The avalanche photodiode further includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface. The photodetector further includes: a dielectric region, arranged on the front surface; a quenching resistor, which extends on the dielectric region, is electrically connected to the anode region, and is laterally spaced apart with respect to the anode region; and an optical-isolation region, which extends through the dielectric region and laterally delimits a portion of the dielectric region, the anode region extending underneath the portion of the dielectric region, the optical-isolation region being moreover interposed between the portion of the dielectric region and the quenching resistor.

公开(公告)号：US09581620B2

公开(公告)日：2017-02-28

申请号：US14615196

申请日：2015-02-05

Applicant: STMicroelectronics S.r.l.

Inventor： Dario Sutera ,  Davide Giuseppe Patti ,  Valeria Cinnera Martino

IPC: G01R15/20 ,  G01R15/18 ,  G01R19/00 ,  G01R33/07

CPC classification number: G01R15/202 ,  G01R15/18 ,  G01R15/207 ,  G01R19/0092 ,  G01R33/07

Abstract: The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.

Abstract translation: 半导体集成器件具有导电区域，例如外部接触焊盘，被配置为被被测量的电流穿过。 磁性材料的集中器部分地围绕导电区域并且具有在限定气隙区域的位置处的环形形状，其中布置有敏感区域，该敏感区域是导电的并且通常是掺杂半导体材料，例如多晶硅。 该器件集成在由衬底形成的芯片和绝缘层中，敏感区域和集中器形成在绝缘层中。