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    OPTICAL FILTER AND CORRESPONDING MANUFACTURING METHOD
    1.
    发明申请
    OPTICAL FILTER AND CORRESPONDING MANUFACTURING METHOD 有权

    公开(公告)号：US20220082743A1

    公开(公告)日：2022-03-17

    申请号：US17469286

    申请日：2021-09-08

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Olivier LE NEEL ,  Stephane ZOLL ,  Stephane MONFRAY

    IPC: G02B5/28 ,  G02B5/18 ,  H01L31/0203 ,  H01L31/0216

    Abstract: An optical filter includes a carrier layer made of a first material. A periodic grating of posts is disposed on the carrier layer in a periodic pattern configured by characteristic dimensions. The posts are made of a second material. A layer made of a third material encompasses the periodic grating of posts and covers the carrier layer. The third material has a refractive index that is different from a refractive index of the second material. Characteristic dimensions of the periodic grating of posts are smaller than an interfering wavelength and are configured to selectively reflect light at the interfering wavelength on the periodic grating of posts.

    LIGHT SENSOR
    2.
    发明申请
    LIGHT SENSOR 有权

    公开(公告)号：US20210088378A1

    公开(公告)日：2021-03-25

    申请号：US17024202

    申请日：2020-09-17

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics SA

    Inventor： Stephane MONFRAY ,  Olivier LE NEEL ,  Frederic BOEUF

    IPC: G01J1/04 ,  H01L31/0232 ,  H01L31/101 ,  G02B5/18 ,  G01J1/44

    Abstract: A light sensor includes a semiconductor substrate supporting a number of pixels. Each pixel includes a photoconversion zone extending in the substrate between a front face and a back face of the substrate. An optical diffraction grating is arranged over the back face of the substrate at a position facing the photoconversion zone of the pixel. For at least two different pixels of the light sensor, the optical diffraction gratings have different pitches. Additionally, the optical grating of each pixel is surrounded by an opaque wall configured to absorb at operating wavelengths of the sensor.

    LIGHT SENSOR
    5.
    发明申请
    LIGHT SENSOR 有权

    公开(公告)号：US20210172791A1

    公开(公告)日：2021-06-10

    申请号：US17116851

    申请日：2020-12-09

    Applicant: STMicroelectronics SA ,  STMicroelectronics (Crolles 2) SAS

    Inventor： Olivier LE NEEL ,  Stephane MONFRAY

    IPC: G01J1/04 ,  H01L27/144 ,  G02B5/20 ,  G01J1/44

    Abstract: A light sensor includes a first pixel and a second pixel. Each pixel has a photoconversion area. A band-stop Fano resonance filter is arranged over the first pixel. The second pixel includes no Fano resonance filter. Signals output from the first and second pixels are processed to determine information representative of the quantity of light received by the light sensor during an illumination phase in a rejection band of the band-stop Fano resonance filter.

    ELECTRONIC CIRCUIT COMPRISING A RF SWITCHES HAVING REDUCED PARASITIC CAPACITANCES
    8.
    发明申请
    ELECTRONIC CIRCUIT COMPRISING A RF SWITCHES HAVING REDUCED PARASITIC CAPACITANCES 有权

    公开(公告)号：US20220359435A1

    公开(公告)日：2022-11-10

    申请号：US17733589

    申请日：2022-04-29

    Applicant: STMicroelectronics (Crolles 2) SAS ,  STMicroelectronics International N.V.

    Inventor： Stephane MONFRAY ,  Siddhartha DHAR ,  Alain FLEURY

    IPC: H01L23/66 ,  H01L23/373 ,  H01L23/42 ,  H01L21/48

    Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

    ELECTRONIC DEVICE COMPRISING A PHOTOSENSITIVE SEMICONDUCTOR REGION AND CORRESPONDING MANUFACTURING METHOD
    9.
    发明申请
    ELECTRONIC DEVICE COMPRISING A PHOTOSENSITIVE SEMICONDUCTOR REGION AND CORRESPONDING MANUFACTURING METHOD 有权

    公开(公告)号：US20220085082A1

    公开(公告)日：2022-03-17

    申请号：US17469702

    申请日：2021-09-08

    Applicant: STMicroelectronics (Crolles 2) SAS

    Inventor： Axel CROCHERIE ,  Stephane MONFRAY

    IPC: H01L27/146

    Abstract: A photosensitive semiconductor region is configured to be illuminated through a rear face. A periodic array of pads formed of a first material is provided at the front face. The periodic array has an outline with a periodic pattern parameterized by characteristic dimensions. The outline forms an interface between the first material and a second material, where the first and second materials have different optical indices. The characteristic dimensions of the periodic pattern are less than a wavelength of interest and are configured to produce at the interface a reflection of light at the wavelength of interest towards the photosensitive semiconductor region.

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