公开(公告)号：US20160372643A1

公开(公告)日：2016-12-22

申请号：US15146372

申请日：2016-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hak KIM ,  Tan SAKONG ,  Eun Deok SIM ,  Jeong Wook LEE ,  Jin Young LIM ,  Byoung Kyun KIM

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0083 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract translation: 半导体发光器件包括由第一材料形成的衬底; 以及从所述基板突出的凸部，包括：与所述基板的第一材料形成的第一层; 以及由与第一材料不同的第二材料形成并设置在第一层上的第二层。 第二层的第二高度大于第一层的第一高度。

公开(公告)号：US20150207034A1

公开(公告)日：2015-07-23

申请号：US14577826

申请日：2014-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

CPC classification number: H01L33/22 ,  H01L33/10

Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。