公开(公告)号：US20160043279A1

公开(公告)日：2016-02-11

申请号：US14661950

申请日：2015-03-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jai Won JEAN ,  Min Hwan KIM ,  Eun Deok SIM ,  Jong Hyun LEE ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/32 ,  H01L33/02 ,  H01L33/46 ,  H01L33/14 ,  H01L33/50 ,  H01L33/24 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/325 ,  B82Y20/00 ,  H01L33/0025 ,  H01L33/025 ,  H01L33/06 ,  H01L33/14 ,  H01L33/24 ,  H01L33/46 ,  H01L33/502 ,  Y10S977/95

Abstract: A semiconductor light emitting device includes an n-type semiconductor layer, a border layer disposed on the n-type semiconductor layer, having band gap energy decreasing in a single direction, and represented by an empirical formula AlxInyGa1−x−yN (0≦x≦0.1, 0.01≦y≦0.1), an active layer disposed on the border layer and having a structure in which one or more InGaN layers and one or more GaN layers are alternately stacked, and a p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的边界层，其带隙能量在单个方向上减小，并且由经验公式AlxInyGa1-x-yN（0＆n1E; x＆ ; 0.1,0.01＆amp; nlE; y＆nlE; 0.1），设置在边界层上并具有一个或多个InGaN层和一个或多个GaN层交替堆叠的结构的有源层和p型半导体层。

公开(公告)号：US20160111595A1

公开(公告)日：2016-04-21

申请号：US14731391

申请日：2015-06-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hyun LEE ,  Min Hwan KIM ,  Eun Deok SIM ,  Ji Heon OH ,  Heon Ho LEE ,  Ho Chul LEE ,  Jae Sung HYUN

IPC: H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/06 ,  H01L33/08 ,  H01L33/32

Abstract: A semiconductor light emitting device may include: a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer and including a plurality of quantum barrier layers and a plurality of quantum well layers which are alternately stacked; and a second conductivity-type semiconductor layer disposed on the active layer. A quantum barrier layer closest to the second conductivity-type semiconductor layer, among the plurality of quantum barrier layers, may include a first undoped region and a first doped region disposed on the first undoped region and having a thickness greater than or equal to that of the first undoped region. Each of the first undoped region and the first doped region may include a plurality of first unit layers having different energy band gaps, and at least one hole accumulation region.

Abstract translation: 半导体发光器件可以包括：第一导电型半导体层; 设置在所述第一导电型半导体层上并且包括多个量子势垒层和交替层叠的多个量子阱层的有源层; 以及设置在有源层上的第二导电型半导体层。 在多个量子势垒层中最靠近第二导电类型半导体层的量子势垒层可以包括第一未掺杂区域和设置在第一未掺杂区域上的第一掺杂区域，并且具有大于或等于 第一个未掺杂的地区。 第一未掺杂区域和第一掺杂区域中的每一个可以包括具有不同能带隙的多个第一单元层和至少一个空穴积聚区域。

公开(公告)号：US20150207026A1

公开(公告)日：2015-07-23

申请号：US14490438

申请日：2014-09-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bum Joon KIM ,  Seung Woo CHOI ,  Sung Tae KIM ,  Young Min PARK ,  Eun Deok SIM ,  Sung Pyo LEE

IPC: H01L33/00 ,  H01L33/62

CPC classification number: H01L33/0075 ,  H01L21/76251 ,  H01L21/7806 ,  H01L33/0066 ,  H01L33/0079 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor light emitting device includes forming a light emitting structure layer including an active layer on a first substrate. A second substrate is bonded to the light emitting structure layer at a first temperature higher than room temperature. The first substrate is removed from the light emitting structure layer at a second temperature higher than room temperature. The second substrate and the light emitting structure are cooled to reach room temperature. A coefficient of thermal expansion of the second substrate is different from a coefficient of thermal expansion of the active layer.

Abstract translation: 制造半导体发光器件的方法包括在第一衬底上形成包括有源层的发光结构层。 第二衬底在高于室温的第一温度下结合到发光结构层。 在高于室温的第二温度下，将第一衬底从发光结构层去除。 将第二基板和发光结构冷却至室温。 第二基板的热膨胀系数与有源层的热膨胀系数不同。

公开(公告)号：US20160372643A1

公开(公告)日：2016-12-22

申请号：US15146372

申请日：2016-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Hak KIM ,  Tan SAKONG ,  Eun Deok SIM ,  Jeong Wook LEE ,  Jin Young LIM ,  Byoung Kyun KIM

IPC: H01L33/58 ,  H01L33/50 ,  H01L33/32 ,  H01L33/42 ,  H01L33/00 ,  H01L33/06

CPC classification number: H01L33/58 ,  H01L33/007 ,  H01L33/22 ,  H01L33/32 ,  H01L2224/14 ,  H01L2224/16225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/181 ,  H01L2933/0083 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light emitting device includes a substrate formed of a first material; and a convex portion protruding from the substrate and including: a first layer formed of the first material as that of the substrate; and a second layer formed of a second material different from the first material and disposed on the first layer. A second height of the second layer is greater than a first height of the first layer.

Abstract translation: 半导体发光器件包括由第一材料形成的衬底; 以及从所述基板突出的凸部，包括：与所述基板的第一材料形成的第一层; 以及由与第一材料不同的第二材料形成并设置在第一层上的第二层。 第二层的第二高度大于第一层的第一高度。

公开(公告)号：US20140346437A1

公开(公告)日：2014-11-27

申请号：US14255854

申请日：2014-04-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Deok SIM ,  Sang Jo KIM ,  Sung Tae KIM ,  Young Sun KIM ,  Seong Ju PARK ,  Suk Ho YOON ,  Sang Jun LEE

IPC: H01L33/06 ,  H01L33/32

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/32 ,  H01L33/382

Abstract: A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0≦x

Abstract translation: 提供了一种半导体发光器件，其包括第一导电型半导体层，包括由In x Ga（1-x）N制成的至少一个量子势垒层的有源层，其中0＆lt; 1E; x

公开(公告)号：US20130313518A1

公开(公告)日：2013-11-28

申请号：US13902610

申请日：2013-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong Uk SEO ,  Eun Deok SIM ,  Sang Don LEE ,  Hyun Kwon HONG

IPC: H01L33/24

CPC classification number: H01L33/24 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44

Abstract: A semiconductor light emitting device includes first and second conductivity-type semiconductor layers formed of AlxGayIn1-x-yP (0≦x≦1, 0≦y≦1, 0≦x+y≦1) or AlzGa1-zAs (0≦z≦1) and an active layer interposed between the first and second conductivity-type semiconductor layers, wherein at least one of the first and second conductivity-type semiconductor layers includes a low refractive index surface layer formed of (AlvGa1-v)0.5In0.5P (0.7≦v≦1) or AlwIn1-wP (0≦w≦1) and having depressions and protrusions.

Abstract translation: 半导体发光器件包括由Al x Ga y In 1-x-y P（0≤x≤1,0≤y≤1,0@ x + y @ 1）或Al z Ga 1-zAs（0 @ z）形成的第一和第二导电型半导体层 其中介于第一和第二导电类型半导体层之间的有源层，其中第一和第二导电类型半导体层中的至少一个包括由（AlvGa1-v）0.5In0形成的低折射率表面层。 5P（0.7 @ v @ 1）或AlwIn1-wP（0 @ w @ 1）并具有凹陷和突起。