公开(公告)号：US20170125254A1

公开(公告)日：2017-05-04

申请号：US15242190

申请日：2016-08-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangsu Kim ,  Byoung Jae PARK ,  Yongsun KO ,  Kyunghyun KIM ,  ChangSup MUN ,  Kijong PARK

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/3065 ,  H01L21/02057 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/32137

Abstract: The inventive concepts provide a method of completely removing a damage region of a surface of an etch target layer after plasma-etching the etch target layer. The method includes performing a first post-etch plasma treatment process using a first post-treatment gas on the plasma-etched etch target layer. A polarity of ions of the first post-treatment gas may be the same as a polarity of bias power applied to a stage in a plasma apparatus.

公开(公告)号：US20150287590A1

公开(公告)日：2015-10-08

申请号：US14669354

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Min OH ,  Yongsun KO ,  Kwangsu KIM ,  SeokHoon KIM ,  ChangSup MUN ,  Kuntack LEE ,  Hyosan LEE ,  Jihoon JEONG ,  Yong-Jhin CHO

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213

CPC classification number: H01L21/02101 ,  H01L21/02057 ,  H01L21/76224 ,  H01L27/10852 ,  H01L27/11582

Abstract: Provided is a method of rinsing and drying a semiconductor device, including forming a pattern on a substrate; rinsing the substrate, where the pattern is formed, using a rinse solution; loading the substrate into a dry chamber; injecting supercritical carbon dioxide into the dry chamber such that rinse solution remaining on the pattern is diluted to have a concentration below 2 percent by weight based on a weight of the rinse solution remaining on the pattern and the supercritical carbon dioxide; and venting the supercritical carbon dioxide such that the dry chamber is maintained at atmospheric pressure to dry the substrate where the pattern is formed.

Abstract translation: 提供了一种冲洗和干燥半导体器件的方法，包括在衬底上形成图案; 使用冲洗溶液冲洗形成图案的基底; 将基板装载到干燥室中; 将超临界二氧化碳注射到干燥室中，使得保留在图案上的冲洗溶液基于残留在图案上的冲洗溶液的重量和超临界二氧化碳被稀释至具有低于2重量％的浓度; 并排出超临界二氧化碳，使得干燥室保持在大气压下，以干燥形成图案的基板。