公开(公告)号：US12148784B2

公开(公告)日：2024-11-19

申请号：US17393855

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik Kim ,  Min-Sun Keel ,  Hoon Joo Na ,  Kang Ho Lee ,  Kil Ho Lee ,  Sang Kil Lee ,  Jung Hyuk Lee ,  Shin Hee Han

IPC: H01L21/768 ,  H01L27/146

Abstract: An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

公开(公告)号：US11631711B2

公开(公告)日：2023-04-18

申请号：US17366868

申请日：2021-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik Kim ,  Young Gu Jin

IPC: H01L27/146 ,  H04N25/771 ,  H04N25/75 ,  H04N25/40 ,  H04N25/76 ,  H04N25/77

Abstract: An image sensor comprises an upper chip including pixels; and a lower chip placed below the upper chip, wherein a pixel of the pixels includes an optical conversion element configured that light is incident on the optical conversion element, a first storage gate or a first storage node which is electrically connected to the optical conversion element and configured to store electric charge transferred from the optical conversion element during a first time interval, and a second storage gate or a second storage node which is electrically connected to the optical conversion element and configured to store the electric charge transferred from the optical conversion element during a second time interval different from the first time interval, the pixel is configured to generate a first pixel signal on the basis of the electric charge stored in the first storage gate, the lower chip includes a frame buffer.

公开(公告)号：US11984467B2

公开(公告)日：2024-05-14

申请号：US17368112

申请日：2021-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae Shik Kim ,  Min-Sun Keel ,  Sang Kil Lee

IPC: H01L27/146 ,  H01L25/065 ,  H10B61/00

CPC classification number: H01L27/14636 ,  H01L25/0657 ,  H01L27/1462 ,  H01L27/14634 ,  H10B61/00

Abstract: An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.