Abstract:
An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.
Abstract:
An image sensor includes an upper chip having a pixel array connected to a first connecting structure, and a lower chip below the upper chip and having a second connecting structure connected to the first connecting structure and having first and second stacked metal layers with a same thickness, a third metal layer on the second metal layer and thicker than the second metal layer, a fourth metal layer on the third metal layer and thicker than the third metal layer, first through third insulating layers alternating with the first through fourth metal layers, a first memory device with a first MTJ element in at least one of the first and second insulating layers, and a second memory device with a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers.
Abstract:
A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.
Abstract:
A semiconductor device is provided. The semiconductor device includes: a processor core which processes program data; a first memory mounted on the same semiconductor chip as the processor core; a second memory including an MRAM cell having a first MTJ (Magnetic Tunnel Junction) structure; a third memory including an MRAM cell having a second MTJ structure different from the first MTJ structure, wherein the processor core selectively stores the program data in one of the first memory, the second memory and the third memory, on the basis of an attribute of the program data.
Abstract:
An apparatus for exchanging a probe includes a stacker configured to receive a probe and to align the probe, a probe connector connected to the probe, and a laser alignment unit including a light emitter and a light receiver. The light emitter is configured to emit a laser beam to the probe, and the light receiver is configured to detect the laser beam reflected by the probe. The laser alignment unit is configured to detect when the probe is properly aligned on the probe connector using the light receiver, and the laser alignment unit is configured to stop moving the stacker when it is detected that the probe is properly aligned.
Abstract:
A process management system can include a processing device that can be configured to perform a semiconductor process on a plurality of wafers, the processing device controlled by a process parameter. A control device can be configured to acquire statistical data relating to the process parameter and can be configured to select a reference wafer from the plurality of wafers. The control device can be configured to compare a respective process parameter used for the reference wafer with the statistical data and can be configured to set a reference condition for the process parameter.
Abstract:
A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.