公开(公告)号：US20220367553A1

公开(公告)日：2022-11-17

申请号：US17745010

申请日：2022-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyungkyu KIM ,  Dong-Hun LEE ,  Woonbae KIM ,  Daeho LEE ,  Jungpil LEE

IPC: H01L27/146

Abstract: A semiconductor package including a substrate including a through hole, an image sensor structure on the substrate, and a first transparent substrate on the substrate and spaced apart from the image sensor structure may be provided. The image sensor structure includes a logic chip on the substrate, a first sensing chip on an active surface of the logic chip, and a second sensing chip on an inactive surface of the logic chip and connected to the active surface of the logic chip through a first via that vertically penetrates the logic chip. On a bottom surface of the logic chip, at least a portion of one of the first sensing chip and the second sensing chip is in the through hole.

公开(公告)号：US20200220012A1

公开(公告)日：2020-07-09

申请号：US16816908

申请日：2020-03-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUNG-GUN YOU ,  Chang-Hee KIM ,  Sung-II PARK ,  Dong-Hun LEE

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8238 ,  H01L21/308 ,  H01L23/532 ,  H01L29/10 ,  H01L29/06

Abstract: A vFET includes a first impurity region doped with first impurities at an upper portion of the substrate. A first diffusion control pattern is formed on the first impurity region. The first diffusion control pattern is configured to control the diffusion of the first impurities. A channel extends in a vertical direction substantially orthogonal to an upper surface of the substrate. A second impurity region is doped with second impurities on the channel. A second diffusion control pattern is between the channel and the second impurity region. The second diffusion control pattern is configured to control the diffusion of the second impurities. A gate structure is adjacent to the channel.

公开(公告)号：US20150261305A1

公开(公告)日：2015-09-17

申请号：US14657462

申请日：2015-03-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bong-seok LEE ,  Dong-Hun LEE

IPC: G06F3/01 ,  G06K9/00 ,  G06F3/0481

CPC classification number: G06F3/017 ,  G06F3/011 ,  G06F3/0304 ,  G06F3/04842 ,  G06K9/00302 ,  G06K9/00355 ,  G06K9/00362

Abstract: A display apparatus and a controlling method thereof are provided. The controlling method of a display apparatus includes displaying a mode conversion user interface (UI) that provides a guideline to enter a motion task mode; recognizing a first motion that corresponds to the guideline; entering the motion task mode that enables a second motion to control a function of the display apparatus in response to the first motion being recognized while the guideline is displayed on the display apparatus; and displaying a motion task UI to perform the motion task mode.

Abstract translation: 提供了一种显示装置及其控制方法。 显示装置的控制方法包括显示提供进入运动任务模式的准则的模式转换用户界面（UI）; 承认对准该准则的第一项动议; 进入所述运动任务模式，所述运动任务模式使得能够响应于当所述指南显示在所述显示装置上时识别出所述第一运动来控制所述显示装置的功能; 并显示运动任务UI以执行运动任务模式。

公开(公告)号：US20150160917A1

公开(公告)日：2015-06-11

申请号：US14521704

申请日：2014-10-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong-Hun LEE ,  Jung-geun KIM

IPC: G06F3/16 ,  G06F3/0484 ,  G06F3/0481

CPC classification number: G06F3/167 ,  G06F3/017

Abstract: A display apparatus and a controlling method thereof are provided. The method for controlling a display apparatus includes displaying at least one display item and a cursor on a display screen; when a predetermined user motion is input while the cursor is located at one of the at least one display item, displaying voice guide information corresponding to the one of the at least one display item where the cursor is located; and when a user voice is input based on the voice guide information while the predetermined user motion is maintained, controlling the one of the at least one display item according to the input user voice.

Abstract translation: 提供了一种显示装置及其控制方法。 用于控制显示装置的方法包括在显示屏幕上显示至少一个显示项目和光标; 当在光标位于至少一个显示项目中的一个时输入预定的用户动作时，显示与光标所在的至少一个显示项目中的一个对应的语音指导信息; 并且当在保持预定用户动作的同时基于语音指南信息输入用户语音时，根据输入的用户语音来控制该至少一个显示项目中的一个。

公开(公告)号：US20180248035A1

公开(公告)日：2018-08-30

申请号：US15670154

申请日：2017-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Il PARK ,  Beom-Jin PARK ,  Yun-Il LEE ,  Jung-Gun YOU ,  Dong-Hun LEE

IPC: H01L29/78 ,  H01L29/788 ,  H01L27/11556 ,  H01L27/092 ,  H01L29/66 ,  H01L29/423

CPC classification number: H01L29/7827 ,  H01L21/823418 ,  H01L21/823487 ,  H01L27/0738 ,  H01L27/088 ,  H01L27/0924 ,  H01L27/11556 ,  H01L27/1203 ,  H01L29/4232 ,  H01L29/66666 ,  H01L29/7889 ,  H01L2027/11866

Abstract: A vertical transistor structure includes a first transistor and a second transistor. The first transistor includes a first lower electrode connected to a second upper electrode of the second transistor, and a second upper electrode connected to a first lower electrode of the second transistor. The first transistor also includes a gate electrode connected to a gate electrode of the second transistor.