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公开(公告)号：US20160240257A1
公开(公告)日：2016-08-18
申请号：US15138302
申请日：2016-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DONGHUN KWAK , Dongkyo Shim , Kitae Park , Hyun-Wook Park
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3459 , G11C16/349 , G11C16/3495
Abstract: A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
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公开(公告)号：US10699782B2
公开(公告)日：2020-06-30
申请号：US16503169
申请日：2019-07-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Won Park , Dongkyo Shim , Kitae Park , Sang-Won Shim
Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
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3.发明授权Nonvolatile memory device and method controlling word line setup time based on difference in setup voltage levels 有权非易失性存储器件和方法基于设置电压电平差异来控制字线建立时间公开(公告)号：US09502124B2
公开(公告)日：2016-11-22
申请号：US14322335
申请日：2014-07-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sang-Won Park , Dongkyo Shim , Kitae Park , Sang-Won Shim
CPC classification number: G11C11/5642 , G11C8/08 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/26 , G11C16/3459 , G11C29/021 , G11C29/028
Abstract: A nonvolatile memory device includes a voltage generator that sequentially provides a first setup voltage and second setup voltage to a word line of a memory cell array, and control logic including a time control unit that determines a word line setup time for the word line in relation to the second setup voltage based on a difference between the first and second setup voltages.
Abstract translation: 非易失性存储器件包括：电压发生器，其向存储单元阵列的字线依次提供第一设定电压和第二设定电压;以及控制逻辑，包括时间控制单元，所述时间控制单元确定所述字线的字线建立时间 基于所述第一和第二设定电压之间的差，将所述第二设置电压提供给所述第二设置电压。
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公开(公告)号：US20220059172A1
公开(公告)日：2022-02-24
申请号：US17520276
申请日：2021-11-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeduk Yu , Dongkyo Shim
Abstract: Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. when the When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.
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公开(公告)号：US20200335169A1
公开(公告)日：2020-10-22
申请号：US16661351
申请日：2019-10-23
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeduk Yu , Dongkyo Shim
Abstract: Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. when the When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.
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Patent Agency Ranking
6.发明授权公开(公告)号：US09824761B2
公开(公告)日：2017-11-21
申请号：US15138302
申请日：2016-04-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DongHun Kwak , Dongkyo Shim , Kitae Park , Hyun-Wook Park
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3459 , G11C16/349 , G11C16/3495
Abstract: A programming method of a nonvolatile memory device including; programming data in memory cells connected to a word line by performing a coarse program operation; and programming the data in the memory cells by performing a fine program operation, wherein the number of program states in the coarse program operation is changed according to a program/erase (P/E) cycle number.
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公开(公告)号：US09336866B2
公开(公告)日：2016-05-10
申请号：US14188889
申请日：2014-02-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： DongHun Kwak , Dongkyo Shim , Kitae Park , Hyun-Wook Park
CPC classification number: G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3459 , G11C16/349 , G11C16/3495
Abstract: A write method of a storage device includes determining whether to perform a coarse program operation based on information about memory cells of a memory device, in response to a determination that the coarse program operation is to be performed, programming data in the memory device by performing the coarse program operation and a fine program operation, and in response to a determination that the coarse program operation is not to be performed, programming data in the memory device by performing the fine program operation.
Abstract translation: 存储装置的写入方法包括响应于要执行粗略编程操作的确定，基于关于存储器件的存储器单元的信息来确定是否执行粗略编程操作，通过执行存储器件中的程序数据 粗程序操作和精细程序操作，并且响应于不执行粗程序操作的确定，通过执行精细程序操作来在存储器件中编程数据。
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公开(公告)号：US12293098B2
公开(公告)日：2025-05-06
申请号：US18053919
申请日：2022-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Dongkyo Shim , Sang Soo Park
Abstract: Disclosed is a nonvolatile memory device which includes a first plane that includes a plurality of memory blocks, a second plane that includes a plurality of memory blocks, an address replacing circuit that receives a first input address from an external controller, the first input address corresponding to a first memory block of the plurality of memory blocks of the first plane from an external controller and outputs a replaced address based on the first input address and bad block information, and an address decoder that controls word lines connected with a second memory block based on the replaced address, the word lines corresponding to the replaced address from among the plurality of memory blocks of the second plane. The first memory block of the first plane is a bad block.
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公开(公告)号：US11315649B2
公开(公告)日：2022-04-26
申请号：US16999964
申请日：2020-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeduk Yu , Dongkyo Shim
Abstract: Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.
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公开(公告)号：US20200381068A1
公开(公告)日：2020-12-03
申请号：US16999964
申请日：2020-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeduk Yu , Dongkyo Shim
Abstract: Provided are a memory controller and memory system having an improved threshold voltage distribution characteristic and an operating method of the memory system. As a write request of data with respect to a first block is received, an erase program interval (EPI) is determined denoting a time period elapsed after erasure of the first block. When the determined EPI is equal to or less than a reference time, data is programmed to the first block based on a first operation condition selected from among a plurality of operation conditions. When the determined EPI is greater than the reference time, the data is programmed to the first block based on a second operation condition selected from among the plurality of operation conditions.
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