公开(公告)号：US20230352532A1

公开(公告)日：2023-11-02

申请号：US18347090

申请日：2023-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cho-eun LEE ,  Seok-hoon KIM ,  Sang-gil LEE ,  Edward CHO ,  Min-hee CHOI ,  Seung-hun LEE

IPC: H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/8234

CPC classification number: H01L29/0847 ,  H01L29/785 ,  H01L21/823814 ,  H01L21/823425 ,  H01L21/823418

Abstract: A semiconductor device includes: a fin-type active region extending on a substrate in a first direction that is parallel to an upper surface of the substrate; and a source/drain region in a recess region extending into the fin-type active region, wherein the source/drain region includes: a first source/drain material layer; a second source/drain material layer on the first source/drain material layer; and a first dopant diffusion barrier layer on an interface between the first source/drain material layer and the second source/drain material layer.

公开(公告)号：US20230395661A1

公开(公告)日：2023-12-07

申请号：US18149957

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sumin YU ,  Jungtaek KIM ,  Moonseung YANG ,  Seojin JEONG ,  Edward CHO ,  Seokhoon KIM ,  Pankwi PARK

IPC: H01L29/08 ,  H01L27/092 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L29/0847 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/161 ,  H01L29/66439 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/66545 ,  H01L29/42392

Abstract: An integrated circuit (IC) device including fin-type active regions parallel to each other on a substrate, the fin-type active regions extending in a first lateral direction, a first nanosheet stack apart from a fin top surface of a first fin-type active region selected from the fin-type active regions, the first nanosheet stack including at least one nanosheet facing the fin top surface of the first fin-type active region, a gate structure surrounding the first nanosheet stack, the gate structure extending in a second lateral direction, a first source/drain region in contact with one sidewall of the first nanosheet stack, and a second source/drain region in contact with another sidewall of the first nanosheet stack , wherein a greatest width of the first source/drain region is less than a greatest width of the second source/drain region in the second lateral direction may be provided.