公开(公告)号：US10714579B2

公开(公告)日：2020-07-14

申请号：US15999191

申请日：2018-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Chul Sung Kim ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/08 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/775 ,  H01L21/285 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78 ,  H01L29/10

Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.

公开(公告)号：US10557198B2

公开(公告)日：2020-02-11

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: H01L21/285 ,  C23C16/455

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US10998412B2

公开(公告)日：2021-05-04

申请号：US16916643

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Chul Sung Kim ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/08 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/775 ,  H01L21/285 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78 ,  H01L29/10

Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.

公开(公告)号：US20200176575A1

公开(公告)日：2020-06-04

申请号：US16695675

申请日：2019-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Wan Don Kim ,  Jeong Hyuk Yim ,  Won Keun Chung ,  Hyo Seok Choi ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/768 ,  H01L29/08

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

公开(公告)号：US11296196B2

公开(公告)日：2022-04-05

申请号：US16695675

申请日：2019-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Wan Don Kim ,  Jeong Hyuk Yim ,  Won Keun Chung ,  Hyo Seok Choi ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768 ,  H01L29/78

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

公开(公告)号：US20190292664A1

公开(公告)日：2019-09-26

申请号：US16190558

申请日：2018-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Dong Woo Kim ,  Jun Ki Park ,  Sang Yub Ie ,  Sang Jin Hyun

IPC: C23C16/455 ,  H01L21/285

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a substrate chuck, a shower head structure over the substrate chuck, and a gas distribution apparatus connected to the shower head structure. The gas distribution apparatus includes a dispersion container including a first dispersion space and a gas inlet section on the dispersion container. The gas inlet section includes a first inlet pipe including a first inlet path fluidly connected to the first dispersion space and a second inlet pipe including a second inlet path fluidly connected to the first dispersion space. The second inlet pipe surrounds at least a portion of a sidewall of the first inlet pipe.

公开(公告)号：US12087833B2

公开(公告)日：2024-09-10

申请号：US18380754

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Wan Don Kim ,  Jeong Hyuk Yim ,  Won Keun Chung ,  Hyo Seok Choi ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L21/768 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/7851

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

公开(公告)号：US11799004B2

公开(公告)日：2023-10-24

申请号：US17694759

申请日：2022-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heon Bok Lee ,  Dae Yong Kim ,  Wan Don Kim ,  Jeong Hyuk Yim ,  Won Keun Chung ,  Hyo Seok Choi ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L21/768 ,  H01L29/78

CPC classification number: H01L29/41775 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/41791 ,  H01L29/6681 ,  H01L29/7851

Abstract: A semiconductor device includes an active pattern on a substrate, the active pattern extending in a first direction, a gate electrode on the active pattern, the gate electrode extending in a second direction intersecting the first direction and including a first portion and a second portion arranged along the second direction, a first contact plug on the gate electrode, the first contact plug being connected to a top surface of the second portion of the gate electrode, a source/drain region in the active pattern on a sidewall of the gate electrode, and a source/drain contact on the source/drain region, a height of a top surface of the source/drain contact being higher than a top surface of the first portion of the gate electrode and lower than the top surface of the second portion of the gate electrode.

公开(公告)号：US20200343350A1

公开(公告)日：2020-10-29

申请号：US16916643

申请日：2020-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heon Bok Lee ,  Chul Sung Kim ,  Sang Jin Hyun

IPC: H01L29/417 ,  H01L29/08 ,  B82Y10/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/775 ,  H01L21/285 ,  H01L21/768 ,  H01L29/06 ,  H01L29/423 ,  H01L29/45 ,  H01L29/78

Abstract: A gate all around field effect transistor (GAAFET) device may include a plurality of nanostructures that are spaced apart from one another in a channel region of the FET device above a substrate. A gate electrode can be in a GAA arrangement with the plurality of nanostructures and a semiconductor pattern can be on one side of the gate electrode. A contact in a contact trench in the semiconductor pattern and a silicide film can extend conformally on a side wall of the contact trench to a level in the channel region that is lower an uppermost one of the plurality of nanostructures.