公开(公告)号：US20220336661A1

公开(公告)日：2022-10-20

申请号：US17857608

申请日：2022-07-05

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Hyun-Seung SONG ,  Hyo-Jin KIM ,  Kyoung-Mi PARK ,  Hwi-Chan JUN ,  SeungSeok HA

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417

Abstract: A semiconductor device includes a first impurity region on a substrate; a channel pattern protruding from an upper surface of the substrate, the channel pattern extending in a first direction substantially parallel to the upper surface of the substrate; a second impurity region on the channel pattern, the second impurity region covering an entire upper surface of the channel pattern; a gate structure on a sidewall of the channel pattern and the substrate adjacent to the channel pattern; a first contact pattern on the second impurity region; a second contact pattern that is electrically connected to the gate structure; and a spacer between the first contact pattern and the second contact pattern. The spacer completely surrounds the second contact pattern in plan view, and the first contact pattern partially surrounds the second contact pattern in plan view.

公开(公告)号：US20180096935A1

公开(公告)日：2018-04-05

申请号：US15497283

申请日：2017-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L21/768 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L23/535 ,  H01L21/76895 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/845 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/41791 ,  H01L29/66545 ,  H01L29/785

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20210098377A1

公开(公告)日：2021-04-01

申请号：US17120616

申请日：2020-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/84 ,  H01L27/12 ,  H01L21/768 ,  H01L29/08 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20140244890A1

公开(公告)日：2014-08-28

申请号：US14190291

申请日：2014-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gyoung-Hwan PARK ,  Hyo-Jin KIM ,  Won-Seob KIM ,  Dong-Ho YU ,  Eun-Seok HONG ,  Sang-Hyun RYU ,  Woo-Sung JANG

IPC: G06F13/40

CPC classification number: G06F13/4068 ,  Y02D10/14 ,  Y02D10/151

Abstract: A method, electronic device apparatus and a cable apparatus for reducing crosstalk in a signal transmitted to an electronic device through the cable apparatus are disclosed. The cable apparatus has a plurality of signal lines. The device and method may determine a relevant communication scheme, activate the relevant communication scheme by electrically coupling at least one of the plurality of signal lines of the cable apparatus correlating to the activated relevant communication scheme. At least one of the plurality of signal lines of the cable apparatus not correlating to the activated relevant communication scheme is electrically grounded.

Abstract translation: 公开了一种通过电缆设备减少发送到电子设备的信号中的串扰的方法，电子设备设备和电缆设备。 电缆装置具有多条信号线。 设备和方法可以确定相关的通信方案，通过电连接与激活的相关通信方案相关的电缆设备的多条信号线中的至少一条来激活相关通信方案。 与激活的相关通信方案不相关的电缆设备的多条信号线中的至少一条电接地。

公开(公告)号：US20230389257A1

公开(公告)日：2023-11-30

申请号：US18076963

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Min SONG ,  Hyo-Jin KIM ,  Kyung Hee CHO

IPC: H01L27/11

CPC classification number: H01L27/1108

Abstract: A semiconductor device includes a substrate, a lower active pattern which is spaced apart from the substrate and extends in a first direction, an upper active pattern on the lower active pattern, the upper active pattern being spaced apart from the lower active pattern and extending in the first direction, a gate structure on the substrate, the gate structure extending in a second direction intersecting the first direction, and a cutting pattern on the substrate, the cutting pattern extending in the first direction to cut the gate structure. The gate structure includes a lower gate electrode through which the lower active pattern penetrates, an upper gate electrode which is connected to the lower gate electrode and through which the upper active pattern penetrates, and an insulating pattern on one side of the cutting pattern, the insulating pattern being arranged with the upper gate electrode along the second direction.

公开(公告)号：US20200013446A1

公开(公告)日：2020-01-09

申请号：US16428184

申请日：2019-05-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Keun Hwi CHO ,  Seunghan PARK ,  Hyo-Jin KIM ,  Gukil AN

IPC: G11C11/22 ,  H01L27/11502 ,  H01L29/51

Abstract: A semiconductor memory device includes a memory cell array including memory cells, a row decoder connected to the memory cell array through first conductive lines, write drivers and sense amplifiers connected to the memory cell array through second conductive lines, a voltage generator that supplies a first voltage to the row decoder and supplies a second voltage to the write drivers and sense amplifiers, and a data buffer that is connected to the write drivers and sense amplifiers and transfers data between the write drivers and sense amplifiers and an external device. At least one of the row decoder, the write drivers and sense amplifiers, the voltage generator, and the data buffer includes a first ferroelectric capacitor to amplify a voltage.

公开(公告)号：US20190122988A1

公开(公告)日：2019-04-25

申请号：US16217220

申请日：2018-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jin KIM ,  Chang-Hwa KIM ,  Hwi-Chan JUN ,  Chul-Hong PARK ,  Jae-Seok YANG ,  Kwan-Young CHUN

IPC: H01L23/535 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/66 ,  H01L29/417 ,  H01L21/768 ,  H01L27/12 ,  H01L21/84 ,  H01L29/78

Abstract: A semiconductor device and a method of manufacturing a semiconductor device, the device including gate structures on a substrate; source/drain layers on portions of the substrate that are adjacent the gate structures, respectively; first contact plugs contacting upper surfaces of the source/drain layers, respectively; a second contact plug contacting one of the gate structures, a sidewall of the second contact plug being covered by an insulating spacer; and a third contact plug commonly contacting an upper surface of at least one of the gate structures and at least one of the first contact plugs, at least a portion of a sidewall of the third contact plug not being covered by an insulating spacer.

公开(公告)号：US20150082153A1

公开(公告)日：2015-03-19

申请号：US14484830

申请日：2014-09-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： In-Hyung JUNG ,  Hyo-Jin KIM

IPC: G06F17/21 ,  G06F3/0488

CPC classification number: G06F3/04883 ,  G06K9/00402 ,  G06K2009/00489 ,  G06K2209/011

Abstract: A method of operating an electronic device is provided. The method includes detecting at least two object displayed contiguously, determining a line interval of the at least two objects, and reconfiguring an interval of the at least two objects based on the determined line interval.

Abstract translation: 提供一种操作电子设备的方法。 该方法包括检测连续显示的至少两个对象，确定至少两个对象的行间隔，并且基于所确定的行间隔来重新配置至少两个对象的间隔。

公开(公告)号：US20230074880A1

公开(公告)日：2023-03-09

申请号：US17830884

申请日：2022-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sungil PARK ,  Jaehyun PARK ,  Hyo-Jin KIM ,  Hyojin KIM ,  Daewon HA

IPC: H01L27/06 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/417 ,  H01L29/735 ,  H01L21/02 ,  H01L29/66 ,  H01L21/8249

Abstract: A semiconductor device includes a first device including first active regions and first to third structures thereon, and a second device including a second active region, a gate structure intersecting the second active region, and a source/drain region including a lower source/drain region on the second active region having first-type conductivity, an inter-source/drain region insulating layer on the lower source/drain region, and an upper source/drain region on the inter-source/drain region insulating layer and having second-type conductivity. The first structure includes first lower and upper impurity regions. The second structure includes a second lower impurity region having the first-type conductivity, an inter-impurity region insulating layer, and a second upper impurity region having the second-type conductivity. The third structure includes third lower and upper impurity regions having the second-type conductivity, the third upper impurity region having an impurity concentration higher than a that of the third lower impurity region.

公开(公告)号：US20130135182A1

公开(公告)日：2013-05-30

申请号：US13684730

申请日：2012-11-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee-Jung JUNG ,  Do-Yun KIM ,  Sung-Yong KIM ,  Hyo-Jin KIM ,  Dong-Won JEONG ,  In-Hyung JUNG

IPC: G09G3/00

CPC classification number: G09G3/00 ,  G06F1/1652 ,  G06F3/0487 ,  G06F2203/04803 ,  H04M1/0214 ,  H04M1/0268 ,  H04M1/72522

Abstract: An apparatus and method display an application in a wireless terminal. The application displaying apparatus and method are capable of simultaneously displaying a plurality of applications in a wireless terminal, with the apparatus including: a flexible display unit which has a screen divided in response to a folding action; and a controller for controlling the flexible display unit to divide the screen of the flexible display unit in response to the folding action for the flexible display unit and to display applications on the divided screens.

Abstract translation: 一种装置和方法在无线终端中显示应用。 应用显示装置和方法能够在无线终端中同时显示多个应用，该装置包括：灵活的显示单元，其具有响应折叠动作分割的屏幕; 以及控制器，用于响应于柔性显示单元的折叠动作来控制柔性显示单元，以分割柔性显示单元的屏幕，并在分屏上显示应用。