公开(公告)号：US20250098147A1

公开(公告)日：2025-03-20

申请号：US18828170

申请日：2024-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunghwan JANG ,  Wonhee CHOI ,  Jinbum KIM ,  Daejin NAM ,  Hyojin PARK ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor device includes a substrate, a bit line extending in a first direction on the substrate, a first vertical channel pattern and a second vertical channel pattern on the bit line, a back gate electrode between the first vertical channel pattern and the second vertical channel pattern and extending in a second direction perpendicular to the first direction across the bit line, a first word line extending in the second direction from one side of the first vertical channel pattern, a second word line extending in the second direction from other side of the second vertical channel pattern, and a contact pattern connected to each of the first vertical channel pattern and the second vertical channel pattern. When viewed from a cross-sectional view, each of the first vertical channel pattern and the second vertical channel pattern have a trapezoidal shape with the long sides facing each other.

公开(公告)号：US20230052061A1

公开(公告)日：2023-02-16

申请号：US17696277

申请日：2022-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin PARK ,  Songyun KANG ,  Sung Yong PARK ,  Keon-Woo KIM

IPC: B24B49/18 ,  B24B37/30 ,  B24B37/04 ,  B24B53/017

Abstract: Disclosed is a substrate polishing method comprising placing a substrate into a substrate polishing apparatus, rotating each of the substrate and a polishing pad of the substrate polishing apparatus, allowing a bottom surface of the substrate to contact a top surface of the polishing pad, and determining whether the polishing pad would benefit from maintenance. The polishing pad includes a plurality of annular regions that are homocentric with a central point of the top surface of the polishing pad. The step of determining whether the polishing pad would benefit from maintenance includes ascertaining a state of the bottom surface of the substrate, and selecting one of the plurality of annular regions by using information about the state of the bottom surface of the substrate. The one of the plurality of annular regions would benefit from maintenance.

公开(公告)号：US20240395501A1

公开(公告)日：2024-11-28

申请号：US18642124

申请日：2024-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyojin PARK ,  Songyun KANG ,  Jiyun JU

IPC: H01J37/32

Abstract: An inductively coupled plasma processing apparatus includes a main body having an internal space; a chamber in the internal space of the main body and having an open upper side and an open lower side; a window unit coupled to an upper portion of the chamber to form a processing space; and a coil in an upper portion of the window unit, wherein the coil is configured to form an electromagnetic field. The main body includes a substrate installation portion configured to receive a substrate so that the substrate is below the chamber. The window unit includes a plurality of windows, and each of the plurality of windows has a respective different thickness and/or a respective different material.

公开(公告)号：US20250142811A1

公开(公告)日：2025-05-01

申请号：US18890123

申请日：2024-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyojin PARK ,  Jinbum KIM ,  Sung-Hwan JANG ,  Dae-Jin NAM ,  Sunguk JANG

IPC: H10B12/00

Abstract: A semiconductor memory device may include bit lines spaced apart from each other in a first direction on a substrate and extending in a second direction, a first active pattern and a second active pattern on the bit lines and are spaced apart from each other in the second direction, and first and second word lines between the first active and second active patterns. The first and second word lines respectively may be adjacent to the first and second active patterns. The first active pattern and/or the second active pattern may include a body portion extending in a third direction and a protruding portion protruding from an upper end of the body portion in the third direction. The protruding portion may have a width in the second direction that is greater than that of the body portion. The third direction may differ from the first and second directions.

公开(公告)号：US20250048621A1

公开(公告)日：2025-02-06

申请号：US18641488

申请日：2024-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunghwan JANG ,  Jinbum KIM ,  Hyojin PARK ,  Sunguk JANG

IPC: H10B12/00 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor memory device includes: a plurality of word lines extending in a first direction; a plurality of channel layers alternately arranged with the word lines, wherein the channel layers extend in a second direction; and a plurality of bit lines located on the word lines and the channel layers, and extending in a third direction. The bit lines are electrically connected to the channel layers. The plurality of word lines include: a plurality of selected word lines to which a positive voltage is applied; and a plurality of non-selected word lines to which a negative voltage is applied. The plurality of channel layers include: a selected channel layer that is turned on; and a non-selected channel layer that is turned off.