公开(公告)号：US11270992B2

公开(公告)日：2022-03-08

申请号：US16992422

申请日：2020-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaehoon Kim ,  Jun Seomun ,  Sua Lee ,  Hyungock Kim

IPC: H01L27/02 ,  H01L23/528 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  G06F30/392 ,  G06F30/394 ,  G06F30/398 ,  G06F115/12

Abstract: A semiconductor device includes standard cells disposed in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, each standard cell including an active region, a gate structure disposed to intersect the active region, source/drain regions on the active region at both sides of the gate structure, and first interconnection lines electrically connected to the active region and the gate structures; filler cells disposed between at least portions of the standard cells, each filler cell including a filler active region and a filler gate structure disposed to intersect the filler active region; and a routing structure disposed on the standard cells and the filler cells and including second interconnection lines electrically connecting the first interconnection lines of different standard cells to each other, wherein the second interconnection lines includes a first line having a first width and a second line having a second width larger than the first width.

公开(公告)号：US09459680B2

公开(公告)日：2016-10-04

申请号：US13948691

申请日：2013-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyungock Kim ,  Wook Kim ,  Jun Seomun ,  Chungki Oh ,  JaeHan Jeon ,  Kyungtae Do ,  JungYun Choi ,  Hyosig Won ,  Kee Sup Kim

IPC: G06F1/32 ,  G05D23/19 ,  G06F1/20

CPC classification number: G06F1/3206 ,  G05D23/1919 ,  G06F1/20 ,  G06F1/324 ,  Y02D10/126

Abstract: A temperature control method of a semiconductor device is provided. The temperature control method includes detecting a temperature of the semiconductor device; activating a reverse body biasing operation in which a body bias voltage applied to a function block of the semiconductor device is regulated, when the detected temperature is greater than a first temperature level; and activating a thermal throttling operation in which at least one of a frequency of a driving clock provided to a function block of the semiconductor device and a driving voltage applied to the function block of the semiconductor device is regulated, when the detected temperature is greater than a second temperature level that is different than the first temperature level.

Abstract translation: 提供了一种半导体器件的温度控制方法。 温度控制方法包括检测半导体器件的温度; 当检测到的温度大于第一温度水平时，激活施加到半导体器件的功能块的体偏置电压的反向体偏置操作; 以及激活热调节操作，其中当检测到的温度大于所述热节流操作时，提供给所述半导体器件的功能块的驱动时钟的频率中的至少一个和施加到所述半导体器件的功能块的驱动电压被调节 与第一温度水平不同的第二温度水平。

公开(公告)号：US11923354B2

公开(公告)日：2024-03-05

申请号：US17338201

申请日：2021-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dayeon Cho ,  Hyungock Kim ,  Sangdo Park

IPC: H01L27/02 ,  G06F30/392 ,  G06F30/398 ,  H01L23/528 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/0207 ,  G06F30/392 ,  G06F30/398 ,  H01L23/5286 ,  H01L27/0925 ,  H01L29/0657 ,  H01L29/42392 ,  H01L29/7851 ,  H01L29/78696

Abstract: A semiconductor device includes standard cells in a first direction parallel to an upper surface of a substrate and a second direction intersecting the first direction, and filler cells between ones of the standard cells. Each of the standard cells includes an active region, a gate structure that intersects the active region, source/drain regions on the active region on both sides of the gate structure, and interconnection lines. Each of the filler cells includes a filler active region and a filler gate structure that intersects the filler active region. The standard cells include first to third standard cells in first to third rows sequentially in the second direction, respectively. First interconnection lines are arranged with a first pitch, second interconnection lines are arranged with a second pitch, and third interconnection lines are arranged with a third pitch different from the first and second pitches.

公开(公告)号：US11430779B2

公开(公告)日：2022-08-30

申请号：US17028855

申请日：2020-09-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaewan Yang ,  Wootae Kim ,  Hyungock Kim ,  Sangdo Park ,  Jun Seomun

IPC: H01L27/02 ,  H01L21/768 ,  H01L27/088 ,  H01L23/522

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The method includes placing a standard cell, resizing a power via pattern in such a way that the power via pattern has a different width from a width of other via pattern, and applying different design rules to the power via pattern and the other via pattern, respectively, to perform a routing operation on the standard cell.

公开(公告)号：US10970452B2

公开(公告)日：2021-04-06

申请号：US16795947

申请日：2020-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyounghwan Lim ,  Hyungock Kim ,  Heeyeon Kim ,  Dongkwan Han

IPC: G06F30/392

Abstract: Provided are a system for designing a semiconductor circuit and an operating method of the same. The system includes a working memory loading a clustering application for generating a cluster, based on instances respectively corresponding to cells of the semiconductor circuit, and loading a design tool for placing the cells. The clustering application, when an output terminal of a first instance is connected to a second instance and the number of instances connected to the output terminal of the first instance is one, classifies the first instance and the second instance into a candidate group pair. The clustering application, when all instances connected to an input terminal of the second instance are classified into the candidate group pair with the second instance, generates the cluster including the first instance and the second instance.