公开(公告)号：US20170140937A1

公开(公告)日：2017-05-18

申请号：US14940184

申请日：2015-11-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dougyong SUNG ,  Sejin OH ,  Je-Hun WOO ,  Hyunju LEE ,  Seungkyu LIM ,  Kiho HWANG

IPC: H01L21/263 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/2633 ,  H01J37/32935 ,  H01L21/31116 ,  H01L21/6831 ,  H01L22/26

Abstract: Provided are a semiconductor device fabricating apparatus configured to perform an atomic layer etching process and a method of fabricating a semiconductor device including performing the atomic layer etching process. The method includes loading a wafer onto an electrostatic chuck in a chamber, performing a first periodical process in which a first gas is supplied to an inside of the chamber and the first gas is adsorbed onto the wafer, performing a second periodical process in which a second gas is supplied to the inside of the chamber and the first gas remaining in the chamber is exhausted to an outside of the chamber, performing a third periodical process in which a third gas is supplied to the inside of the chamber, plasma including the third gas is generated, the plasma collides with the wafer, and the first gas adsorbed onto the wafer is removed, and unloading the wafer to the outside of the chamber.

公开(公告)号：US20210183618A1

公开(公告)日：2021-06-17

申请号：US17186965

申请日：2021-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho LEE ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

公开(公告)号：US20180366304A1

公开(公告)日：2018-12-20

申请号：US15867188

申请日：2018-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seung Bo SHIM ,  Nam Jun KANG ,  Se Kwon NA ,  Je-Hun WOO ,  Seung Kyu LIM ,  Ji Soo IM

IPC: H01J37/32 ,  H01L21/67

Abstract: A plasma processing apparatus and a method for fabricating a semiconductor device using the same are provided. The plasma processing apparatus includes: a chuck stage configured to support a wafer thereon; a dielectric ring configured to surround a periphery of the chuck stage, the dielectric ring including a paraelectric material; and a dielectric constant controller configured to control a dielectric constant of the dielectric ring.

公开(公告)号：US20180114700A1

公开(公告)日：2018-04-26

申请号：US15490945

申请日：2017-04-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Je-Hun WOO ,  Dougyong SUNG ,  Sejin OH

IPC: H01L21/311 ,  H01L21/683

CPC classification number: H01L21/31116 ,  H01L21/3065 ,  H01L21/67109 ,  H01L21/6831

Abstract: A method of atomic layer etching and fabricating a semiconductor device using the same, the atomic layer etching including providing a layer including atomic layers each having first and second atoms, the second atoms being different from the first atoms; and sequentially removing each of the atomic layers, wherein removing each of the atomic layers includes: providing a first etching gas that reacts with the first atoms such that the first etching gas is adsorbed on the first atoms; purging the first etching gas not adsorbed on the first atoms; removing the first atoms on which the first etching gas is adsorbed; providing a second etching gas that reacts with the second atoms such that the second etching gas is adsorbed on the second atoms; purging the second etching gas not adsorbed on the second atoms; and removing the second atoms on which the second etching gas is adsorbed.

公开(公告)号：US20180114675A1

公开(公告)日：2018-04-26

申请号：US15723837

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub LEE ,  Dougyong SUNG ,  Je-Hun WOO ,  Bongseong KIM ,  Juho Lee ,  Yun-Kwang JEON ,  Junghyun CHO

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32119 ,  H01J37/32174 ,  H01J37/32183 ,  H01L21/67069

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.