公开(公告)号：US20160154768A1

公开(公告)日：2016-06-02

申请号：US14904006

申请日：2014-07-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seongjoon Jeon ,  Jeongmin Lee

IPC: G06F17/21 ,  G06F3/0488

CPC classification number: G06F17/212 ,  G06F3/0488 ,  G06F17/21

Abstract: A method and an apparatus for processing a memo in a portable terminal are provided. The method includes displaying a memo screen, detecting a memo input in the memo screen, processing the memo input to generate an image, adjusting a line spacing of the memo screen according to the image, and adjusting the image to a default line spacing.

Abstract translation: 提供了一种在便携式终端中处理备忘录的方法和装置。 该方法包括显示备忘录屏幕，检测备忘录屏幕中的备忘录输入，处理备忘录输入以生成图像，根据图像调整备忘录屏幕的行间距，并将图像调整为默认行间距。

公开(公告)号：US12148800B2

公开(公告)日：2024-11-19

申请号：US18325335

申请日：2023-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan Hong ,  Hanki Lee ,  Jeongmin Lee

IPC: H01L29/167 ,  B82Y10/00 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/165 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

公开(公告)号：US10269594B2

公开(公告)日：2019-04-23

申请号：US15203399

申请日：2016-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon Lee ,  Jungwoo Seo ,  Joonghan Shin ,  Byung Joo Oh ,  Jeongmin Lee ,  Gi-Nam Park ,  Jonghyun Lee

IPC: H05B3/00 ,  F21V9/00 ,  G02B5/00 ,  G02B5/20 ,  C23C14/48 ,  H01L21/67 ,  H01L21/687

Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.

公开(公告)号：US11695046B2

公开(公告)日：2023-07-04

申请号：US17370551

申请日：2021-07-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sahwan Hong ,  Hanki Lee ,  Jeongmin Lee

IPC: H01L29/167 ,  H01L29/08 ,  H01L29/417 ,  H01L21/02 ,  H01L29/06 ,  H01L29/165 ,  H01L29/423 ,  H01L29/66 ,  H01L29/78 ,  H01L29/786 ,  H01L29/775 ,  B82Y10/00 ,  H01L21/8234

CPC classification number: H01L29/167 ,  H01L29/0847 ,  H01L29/41775

Abstract: A semiconductor device includes an active region on a substrate, a gate structure on the substrate and intersecting the active region, a source/drain region on the active region on both sides of the gate structure and including silicon (Si), and a contact structure on the source/drain region. The source/drain region includes a shallow doping region doped with germanium (Ge) and is in an upper region including an upper surface of the source/drain region. A concentration of germanium (Ge) in the shallow doping region gradually decreases from the upper surface of the source/drain region toward an upper surface of the substrate in a direction that is perpendicular to an upper surface of the substrate.

公开(公告)号：US20170076965A1

公开(公告)日：2017-03-16

申请号：US15203399

申请日：2016-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon Lee ,  Jungwoo Seo ,  Joonghan Shin ,  Byung Joo Oh ,  Jeongmin Lee ,  Gi-Nam Park ,  Jonghyun Lee

IPC: H01L21/67 ,  H01L21/687 ,  G02B5/00 ,  H05B3/00 ,  C23C14/48 ,  G02B5/20

CPC classification number: H01L21/67115 ,  C23C14/48 ,  G02B5/003 ,  G02B5/205 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68757 ,  H05B3/0047

Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.

Abstract translation: 公开了一种透明板和包括该透明板的基板处理系统。 衬底处理系统可以包括腔室，设置在腔室下方的灯以及设置在腔室中以加载衬底的板。 该板可以包括具有第一透射率值的中心区域和具有比第一透射率值高的第二透射率值的边缘区域。