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公开(公告)号:US20170076965A1
公开(公告)日:2017-03-16
申请号:US15203399
申请日:2016-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Nam Hoon Lee , Jungwoo Seo , Joonghan Shin , Byung Joo Oh , Jeongmin Lee , Gi-Nam Park , Jonghyun Lee
CPC classification number: H01L21/67115 , C23C14/48 , G02B5/003 , G02B5/205 , H01L21/68735 , H01L21/6875 , H01L21/68757 , H05B3/0047
Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.
Abstract translation: 公开了一种透明板和包括该透明板的基板处理系统。 衬底处理系统可以包括腔室,设置在腔室下方的灯以及设置在腔室中以加载衬底的板。 该板可以包括具有第一透射率值的中心区域和具有比第一透射率值高的第二透射率值的边缘区域。
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公开(公告)号:US10269594B2
公开(公告)日:2019-04-23
申请号:US15203399
申请日:2016-07-06
Applicant: Samsung Electronics Co., Ltd.
Inventor: Nam Hoon Lee , Jungwoo Seo , Joonghan Shin , Byung Joo Oh , Jeongmin Lee , Gi-Nam Park , Jonghyun Lee
Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.
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公开(公告)号:US11158510B2
公开(公告)日:2021-10-26
申请号:US16393232
申请日:2019-04-24
Applicant: Samsung Electronics Co., Ltd. , EO Technics Co., LTD
Inventor: Nam Hoon Lee , Ill Hyun Park , Tae Hee Han , Jin Won Ma , Byung Joo Oh , Bong Ju Lee , Jae Hee Lee , Joo Yong Lee , Nam Ki Cho , Chang Seong Hong
IPC: G01N21/25 , H01L21/268 , B23K26/354 , H01L21/67 , H01L21/66 , B23K26/03
Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
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公开(公告)号:US10665483B2
公开(公告)日:2020-05-26
申请号:US15250186
申请日:2016-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gi-Nam Park , Bokyung Jung , Leekwon Gil , Jungwoo Seo , Dongseok Baek , Nam Hoon Lee , Jonghyun Lee
IPC: H01L21/67 , H01L21/687 , H05B3/00
Abstract: An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.
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公开(公告)号:US11764064B2
公开(公告)日:2023-09-19
申请号:US17479256
申请日:2021-09-20
Applicant: Samsung Electronics Co., Ltd.
Inventor: Nam Hoon Lee , Ill Hyun Park , Tae Hee Han , Jin Won Ma , Byung Joo Oh , Bong Ju Lee , Jae Hee Lee , Joo Yong Lee , Nam Ki Cho , Chang Seong Hong
IPC: G01N21/25 , H01L21/268 , B23K26/354 , H01L21/67 , H01L21/66 , B23K26/03
CPC classification number: H01L21/268 , B23K26/032 , B23K26/354 , G01N21/25 , H01L21/67248 , H01L22/12
Abstract: Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
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公开(公告)号:US20170098563A1
公开(公告)日:2017-04-06
申请号:US15250186
申请日:2016-08-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Gi-Nam Park , Bokyung Jung , Leekwon Gil , Jungwoo Seo , Dongseok Baek , Nam Hoon Lee , Jonghyun Lee
CPC classification number: H01L21/67115 , H01L21/68735 , H01L21/6875 , H01L21/68785 , H05B3/0047
Abstract: An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.
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