公开(公告)号：US20170098563A1

公开(公告)日：2017-04-06

申请号：US15250186

申请日：2016-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi-Nam Park ,  Bokyung Jung ,  Leekwon Gil ,  Jungwoo Seo ,  Dongseok Baek ,  Nam Hoon Lee ,  Jonghyun Lee

IPC: H01L21/67 ,  H05B3/00

CPC classification number: H01L21/67115 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68785 ,  H05B3/0047

Abstract: An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.

公开(公告)号：US10665483B2

公开(公告)日：2020-05-26

申请号：US15250186

申请日：2016-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi-Nam Park ,  Bokyung Jung ,  Leekwon Gil ,  Jungwoo Seo ,  Dongseok Baek ,  Nam Hoon Lee ,  Jonghyun Lee

IPC: H01L21/67 ,  H01L21/687 ,  H05B3/00

Abstract: An apparatus for treating a substrate includes a chamber including a space in which a substrate is treated, a support member disposed in the chamber and supporting the substrate, and a heating member for heating the substrate. The space is divided into an upper space and a lower space by the support member. The support member includes a support plate receiving the substrate, a base supporting the support plate, exposing a bottom surface of the support plate and including a cut region formed in an edge portion of the base, and an adjustment block held in the cut region and coupled to the base. The cut region fluidly connects the upper space to the lower space. The adjustment block divides the cut region into a plurality of vents.

公开(公告)号：US20170076965A1

公开(公告)日：2017-03-16

申请号：US15203399

申请日：2016-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon Lee ,  Jungwoo Seo ,  Joonghan Shin ,  Byung Joo Oh ,  Jeongmin Lee ,  Gi-Nam Park ,  Jonghyun Lee

IPC: H01L21/67 ,  H01L21/687 ,  G02B5/00 ,  H05B3/00 ,  C23C14/48 ,  G02B5/20

CPC classification number: H01L21/67115 ,  C23C14/48 ,  G02B5/003 ,  G02B5/205 ,  H01L21/68735 ,  H01L21/6875 ,  H01L21/68757 ,  H05B3/0047

Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.

Abstract translation: 公开了一种透明板和包括该透明板的基板处理系统。 衬底处理系统可以包括腔室，设置在腔室下方的灯以及设置在腔室中以加载衬底的板。 该板可以包括具有第一透射率值的中心区域和具有比第一透射率值高的第二透射率值的边缘区域。

公开(公告)号：US10269594B2

公开(公告)日：2019-04-23

申请号：US15203399

申请日：2016-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam Hoon Lee ,  Jungwoo Seo ,  Joonghan Shin ,  Byung Joo Oh ,  Jeongmin Lee ,  Gi-Nam Park ,  Jonghyun Lee

IPC: H05B3/00 ,  F21V9/00 ,  G02B5/00 ,  G02B5/20 ,  C23C14/48 ,  H01L21/67 ,  H01L21/687

Abstract: A transparent plate and a substrate processing system including the same are disclosed. The substrate processing system may include a chamber, a lamp provided below the chamber, and a plate provided in the chamber to load a substrate. The plate may include a center region having a first transmittance value and an edge region having with a second transmittance value higher than the first transmittance value.

公开(公告)号：US09178026B2

公开(公告)日：2015-11-03

申请号：US13967478

申请日：2013-08-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jungwoo Seo

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119 ,  H01L29/417 ,  H01L29/78 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L29/41775 ,  H01L27/10885 ,  H01L27/10894 ,  H01L27/10897 ,  H01L29/4236 ,  H01L29/4991 ,  H01L29/66621 ,  H01L29/78

Abstract: Disclosed are semiconductor devices and methods of forming the same. According to the semiconductor device, gate structures are provided to be buried in a substrate and first dopant regions and second dopant regions are provided at both ends of the gate structures. Conductive lines cross the gate structures and are connected to the first dopant regions. Contact structures are respectively provided in contact holes which are provided between the conductive lines and expose the second dopant regions. The contact structures are in contact with the second dopant regions, respectively. Each of the contact structures includes a pad pattern extending along a sidewall of the contact hole.

Abstract translation: 公开了半导体器件及其形成方法。 根据半导体器件，提供栅极结构以埋在衬底中，并且在栅极结构的两端设置第一掺杂区域和第二掺杂剂区域。 导电线穿过栅极结构并连接到第一掺杂区域。 接触结构分别设置在设置在导线之间并露出第二掺杂区的接触孔中。 接触结构分别与第二掺杂剂区域接触。 每个接触结构包括沿接触孔的侧壁延伸的焊盘图案。