公开(公告)号：US20240405014A1

公开(公告)日：2024-12-05

申请号：US18405843

申请日：2024-01-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkyu Song ,  Jin Heo ,  Minho Kim ,  Jooyoung Song ,  Eunsuk Lee ,  Chanhee Jeon

IPC: H01L27/02 ,  H01L27/06 ,  H01L29/06 ,  H01L29/735 ,  H01L29/78

Abstract: The present disclosure relates to semiconductor devices. An example semiconductor device includes a first well region and a second well region isolated from each other by a first device isolation film; an NPN transistor provided by a first collector region formed in the first well region and including first conductivity-type impurities, and a first emitter region formed in the second well region and including the first conductivity-type impurities; a PNP transistor provided by a second emitter region formed in the first well region and including second conductivity-type impurities different from the first conductivity-type, and a second collector region formed in the second well region and including the second conductivity-type impurities; and an NMOS transistor including a source region and a drain region formed in the second well region and including the first conductivity-type impurities, and a gate structure disposed between the source region and the drain region.

公开(公告)号：US20240259008A1

公开(公告)日：2024-08-01

申请号：US18236303

申请日：2023-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Heo ,  Jongkyu Song ,  Minho Kim ,  Jooyoung Song ,  Chanhee Jeon

IPC: H03K17/08

CPC classification number: H03K17/08

Abstract: A semiconductor device is provided. The semiconductor device includes: a first power pad; a second power pad; a signal pad; a clamping circuit connected between the first power pad and the second power pad; a driving circuit connected to the signal pad and including a pull-up circuit and a pull-down circuit; and a first gate-off circuit connected to the pull-down circuit. The first gate-off circuit is configured to connect a gate of the pull-down circuit and a source of the pull-down circuit to each other during an electrostatic discharge (ESD) event in which a high voltage is applied to the signal pad, and control a current generated by the high voltage to flow to the clamping circuit.

公开(公告)号：US11908895B2

公开(公告)日：2024-02-20

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

CPC classification number: H01L29/0821 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

公开(公告)号：US10134723B2

公开(公告)日：2018-11-20

申请号：US15708452

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.

公开(公告)号：US09967830B2

公开(公告)日：2018-05-08

申请号：US15214918

申请日：2016-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Suk Won ,  Su Hyung Kim ,  Jin Heo ,  Hyung Suk Kim ,  Bong Gon Kim ,  Kwan Woong Song ,  Seung Bum Lee ,  Sung Dae Cho ,  Seung Seok Hong ,  Jae Yong Yang ,  Choel Min Park

IPC: H04W52/28 ,  H04W52/18 ,  H04W52/22 ,  H04W52/34

CPC classification number: H04W52/18 ,  H04W52/223 ,  H04W52/28 ,  H04W52/343

Abstract: A portable electronic device is provided. The portable electronic device includes a communication interface, a memory configured to store multimedia data obtained through at least one camera operatively connected with the memory, and a processor. The processor is configured to transmit at least part of the multimedia data to an external electronic device through a network using a first transmit power function of the portable electronic device, through the communication interface, to determine context information associated with at least one of the portable electronic device and the network, and to change from the first transmit power function to a second transmit power function of the portable electronic device if the context information corresponds to a condition.

公开(公告)号：US20180012883A1

公开(公告)日：2018-01-11

申请号：US15708452

申请日：2017-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L27/027

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.

公开(公告)号：US09696958B2

公开(公告)日：2017-07-04

申请号：US14471411

申请日：2014-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunha Choi ,  Jimin Kim ,  Jin Heo ,  Hyunsoo Kim ,  Soonhyun Cha ,  Hyunmun Kim

IPC: G09F3/14 ,  G06F3/14 ,  G09G5/12

CPC classification number: G06F3/1446 ,  G06F3/1454 ,  G09G5/12 ,  G09G2320/08 ,  G09G2356/00 ,  G09G2370/025 ,  G09G2370/16

Abstract: A system and method for presenting content through a plurality of electronic devices are provided. The method includes presenting content through a plurality of electronic devices comprising at least a first electronic device and a second electronic device, wherein the presenting of the content comprises displaying a first portion of the content through the first electronic device and displaying a second portion of the content through the second electronic device, identifying an input for at least one of the plurality of electronic devices while the content is being displayed, setting the plurality of electronic devices as a first group comprising the first electronic device and a second group comprising the second electronic device, based on at least the input, and independently presenting the content through the first group and the second group, based on the setting.

公开(公告)号：US11843818B2

公开(公告)日：2023-12-12

申请号：US17838850

申请日：2022-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Heo ,  Keunha Choi ,  Wonki Kim

IPC: H04N21/43 ,  H04N21/442 ,  H04L65/70 ,  H04N21/234 ,  H04N21/233

CPC classification number: H04N21/4302 ,  H04L65/70 ,  H04N21/234 ,  H04N21/2335 ,  H04N21/44209

Abstract: An example electronic device according to various embodiments of this document may include: at least one auxiliary processor; and a main processor operably connected to the at least one auxiliary processor, wherein the main processor may be configured to: obtain moving image data; separate the moving image data into image data including plural consecutive image frames, first audio data including plural consecutive audio frames, and plural timestamps corresponding respectively to the plural consecutive audio frames; generate second audio data using the first audio data by adding header data to each of the plural audio frames; transmit the second audio data to the at least one auxiliary processor; generate, based on first time information successively received from the at least one auxiliary processor, second time information; and play back the image data based on the second time information, and wherein the at least one auxiliary processor may be configured to: play back an audio signal based on the received second audio data; and generate the first time information about a playback time of the audio signal based on the header data.

公开(公告)号：US20220231126A1

公开(公告)日：2022-07-21

申请号：US17542728

申请日：2021-12-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongkyu Song ,  Jaehyun Yoo ,  Jangkyu Choi ,  Jin Heo ,  Changsu Kim ,  Chanhee Jeon

IPC: H01L29/08 ,  H01L29/735

Abstract: An electrostatic discharge protection device includes: an emitter region disposed on a semiconductor substrate; a base region surrounding the emitter region; a first collector region surrounding the base region; a second collector region surrounding the first collector region; a second conductivity-type drift region below the emitter region, and being deeper than the base region; a second conductivity-type well region disposed below the base region, and having a junction interface with the second conductivity-type drift region; and a plurality of isolation portions disposed between the emitter region, the base region, and the first collector region and the second collector region.

公开(公告)号：US09799641B2

公开(公告)日：2017-10-24

申请号：US14809299

申请日：2015-07-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hyok Ko ,  Han-Gu Kim ,  Jong-Kyu Song ,  Jin Heo

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L27/027

Abstract: In an ESD protection device, a first well of a first conductivity type and a second well of a second conductivity type are formed in a substrate to contact each other. A first impurity region of the first conductivity type and a second impurity region of the second conductivity type are formed in the first well, and are electrically connected to a first electrode pad. The second impurity region is spaced apart from the first impurity region in a direction of the second well. A third impurity region is formed in the second well, has the second conductivity type, and is electrically connected to a second electrode pad. A fourth impurity region is formed in the second well, is located in a direction of the first well from the third impurity region to contact the third impurity region, has the first conductivity type, and is electrically floated.