公开(公告)号：US10990463B2

公开(公告)日：2021-04-27

申请号：US16218720

申请日：2018-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsu Kim ,  Jiseok Kang ,  Minsoo Kim ,  Byungjik Kim ,  Wonjae Shin ,  Donghoon Lee ,  Yeonhwa Lee ,  Ho-Young Lee ,  Youjin Jang ,  Insu Choi

IPC: G06F11/07 ,  G06F12/02 ,  G06F12/0804 ,  G06F11/14

Abstract: A semiconductor memory module may include a random access memory, a nonvolatile memory, a buffer memory, and a controller configured to execute a reading operation on the buffer memory in response to an activation of a control signal. The controller may be further configured to execute a flush operation of storing first data, which are stored in the random access memory, in the nonvolatile memory, according to a result of the reading operation.

公开(公告)号：US11328786B2

公开(公告)日：2022-05-10

申请号：US16781184

申请日：2020-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihyuk Oh ,  Jiseok Kang ,  Junho Jung

IPC: G11C29/10 ,  G06F13/16

Abstract: A memory module includes at least one semiconductor memory device, and a test pattern memory that stores first test pattern information for testing the at least one semiconductor memory device, and the first test pattern information stored in the test pattern memory is transferred to a host in a test operation. Through the memory module having the above-described function, a memory test is possible in consideration of a unique weak characteristic of the memory module.

公开(公告)号：US11210208B2

公开(公告)日：2021-12-28

申请号：US16162821

申请日：2018-10-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Jeong Kim ,  Jiseok Kang ,  Tae-Kyeong Ko ,  Sung-Joon Kim ,  Wooseop Kim ,  Chanik Park ,  Wonjae Shin ,  Yongjun Yu ,  Insu Choi

IPC: G06F12/02 ,  G11C11/56 ,  G06F3/06 ,  G06F13/16

Abstract: A memory system includes a nonvolatile memory module and a first controller configured to control the nonvolatile memory module. The nonvolatile memory module includes a volatile memory device, a nonvolatile memory device, and a second controller configured to control the volatile memory device and the nonvolatile memory device. The first controller may be configured to transmit a read request to the second controller. When, during a read operation according to the read request, normal data is not received from the nonvolatile memory device, the first controller may perform one or more retransmits of the read request to the second controller without a limitation on a number of times that the first controller performs the one or more retransmits of the read request.

公开(公告)号：US20210020258A1

公开(公告)日：2021-01-21

申请号：US16781184

申请日：2020-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jihyuk OH ,  Jiseok Kang ,  Junho Jung

IPC: G11C29/10 ,  G06F13/16

Abstract: A memory module includes at least one semiconductor memory device, and a test pattern memory that stores first test pattern information for testing the at least one semiconductor memory device, and the first test pattern information stored in the test pattern memory is transferred to a host in a test operation. Through the memory module having the above-described function, a memory test is possible in consideration of a unique weak characteristic of the memory module.