公开(公告)号：US20220130884A1

公开(公告)日：2022-04-28

申请号：US17393855

申请日：2021-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae Shik KIM ,  Min-Sun KEEL ,  Hoon Joo NA ,  Kang Ho LEE ,  Kil Ho LEE ,  Sang Kil LEE ,  Jung Hyuk LEE ,  Shin Hee HAN

IPC: H01L27/146

Abstract: An image sensor including a variable resistance element is provided. The image sensor comprises first and second chips having first and second connecting structures; and a contact plug connecting the first and second chips. The first chip includes a photoelectric conversion element. The second chip includes a first variable resistance element. The contact plug extends from the first surface of the first semiconductor substrate to connect the first and second connecting structures.

公开(公告)号：US20190326355A1

公开(公告)日：2019-10-24

申请号：US16161370

申请日：2018-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsu SON ,  Seung Pil KO ,  Jung Hyuk LEE ,  Shinhee HAN ,  Gwan-Hyeob KOH ,  Yoonjong SONG

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.

公开(公告)号：US20210397366A1

公开(公告)日：2021-12-23

申请号：US17172299

申请日：2021-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung Hyuk LEE ,  Hye Min SHIN ,  Kang Ho LEE

IPC: G06F3/06

Abstract: A memory device includes a first nonvolatile memory including a resistive memory cell; and a controller. The controller may be configured to provide the first nonvolatile memory with a first data, a first program command, and a first address. The controller may be configured to receive a second data, which is a verify read from the resistive memory cell programmed with the first data, from the first nonvolatile memory in response to the first program command. The controller may be configured to compare the first data with the second data to detect a number of fail cells. When the number of detected fail cells is greater than a reference value, the controller may be configured to generate a third data obtained by inversing the first data, and provide the third data to the first nonvolatile memory. The first data may include an inversion flag bit.

公开(公告)号：US20210005663A1

公开(公告)日：2021-01-07

申请号：US17027980

申请日：2020-09-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myoungsu SON ,  Seung Pil KO ,  Jung Hyuk LEE ,  Shinhee HAN ,  Gwan-Hyeob KOH ,  Yoonjong SONG

IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08

Abstract: A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.