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    STORAGE DEVICES, METHODS OF OPERATING STORAGE DEVICES, AND METHODS OF OPERATING HOST DEVICES
    1.
    发明公开
    STORAGE DEVICES, METHODS OF OPERATING STORAGE DEVICES, AND METHODS OF OPERATING HOST DEVICES 审中-公开

    公开(公告)号：US20230195332A1

    公开(公告)日：2023-06-22

    申请号：US17815245

    申请日：2022-07-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Jin Lee ,  Ji Soo Kim ,  Kyung-Woo Noh ,  Young Hyun Ji

    IPC: G06F3/06

    CPC classification number: G06F3/0623 ,  G06F3/0652 ,  G06F3/0679

    Abstract: A storage device, a method of operating the storage device, and a method of operating a host device are provided. The storage device includes a nonvolatile memory (NVM) and a storage controller controlling the nonvolatile memory. The storage controller is configured to receive a command from a host device giving instructions to sanitize data with the use of a cryptographic erase. The storage controller is also configured to, in response to a request from the host device, transmit to the host device a first verification value indicative of whether a first media encryption key (MEK) stored in the NVM has been deleted and a second verification value indicative of whether a second MEK, which is different from the first MEK, has been generated and stored in the NVM.

    SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT
    2.
    发明申请
    SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT 有权
    使用磁共振预测和旋转过滤效果的转子转子磁力记忆装置

    公开(公告)号：US20150340595A1

    公开(公告)日：2015-11-26

    申请号：US14814163

    申请日：2015-07-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Jin Lee ,  Soo-Man Seo

    IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

    Abstract: The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.

    Abstract translation: 本发明涉及一种磁存储器件，其还包括构成具有固定的饱和磁化值的水平方向可变磁化层的自由磁性层，由此与常规磁性层相比，开关电流显着降低，使得高度集成 的器件，并且可以降低磁化反转所需的临界电流密度，从而降低器件的功耗。 此外，从固定磁性层发生的杂散场效应减小，使得写入的磁化数据是热稳定的。

    Chassis for vehicle with digital cockpit
    3.
    外观设计
    Chassis for vehicle with digital cockpit 有权

    公开(公告)号：USD1032423S1

    公开(公告)日：2024-06-25

    申请号：US29797781

    申请日：2021-07-02

    Applicant: Samsung Electronics Co., Ltd.

    Designer： Kwan-Jun Ryu ,  Kyung-Jin Lee ,  Jei-Sung Park ,  Ki-Byung Chai

    Abstract: FIG. 1 is a front perspective view of a chassis for vehicle with digital cockpit showing our new design;
    FIG. 2 is a front view thereof;
    FIG. 3 is a rear view thereof;
    FIG. 4 is a left side view thereof;
    FIG. 5 is a right side view thereof;
    FIG. 6 is a top plan view thereof;
    FIG. 7 is a bottom plan view thereof; and,
    FIG. 8 is a rear perspective view thereof.
    The dashed broken lines in the drawings illustrate portions of the chassis for vehicle with digital cockpit that form no part of the claimed design.

    Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect
    4.
    发明授权
    Spin transfer torque magnetic memory device using magnetic resonance precession and the spin filtering effect 有权
    旋转转矩磁记忆装置采用磁共振进动和自旋滤波效果

    公开(公告)号：US09478729B2

    公开(公告)日：2016-10-25

    申请号：US14814163

    申请日：2015-07-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Jin Lee ,  Soo-Man Seo

    IPC: H01L29/82 ,  H01L21/02 ,  H01L29/66 ,  G11C11/00 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/02 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

    Abstract: The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable.

    Abstract translation: 本发明涉及一种磁存储器件，其还包括构成具有固定的饱和磁化值的水平方向可变磁化层的自由磁性层，由此与常规磁性层相比，开关电流显着降低，使得高度集成 的器件，并且可以降低磁化反转所需的临界电流密度，从而降低器件的功耗。 此外，从固定磁性层发生的杂散场效应减小，使得写入的磁化数据是热稳定的。

    Magnetic memory device
    5.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US12262648B2

    公开(公告)日：2025-03-25

    申请号：US17723845

    申请日：2022-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byongguk Park ,  Jeong-Heon Park ,  Kyung-Jin Lee ,  Jeongchun Ryu

    IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N52/00 ,  H10N52/80 ,  H10N52/01

    Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.

    Storage devices, methods of operating storage devices, and methods of operating host devices
    8.
    发明授权
    Storage devices, methods of operating storage devices, and methods of operating host devices 有权

    公开(公告)号：US12014059B2

    公开(公告)日：2024-06-18

    申请号：US17815245

    申请日：2022-07-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung-Jin Lee ,  Ji Soo Kim ,  Kyung-Woo Noh ,  Young Hyun Ji

    IPC: G06F3/06

    CPC classification number: G06F3/0623 ,  G06F3/0652 ,  G06F3/0679

    Abstract: A storage device, a method of operating the storage device, and a method of operating a host device are provided. The storage device includes a nonvolatile memory (NVM) and a storage controller controlling the nonvolatile memory. The storage controller is configured to receive a command from a host device giving instructions to sanitize data with the use of a cryptographic erase. The storage controller is also configured to, in response to a request from the host device, transmit to the host device a first verification value indicative of whether a first media encryption key (MEK) stored in the NVM has been deleted and a second verification value indicative of whether a second MEK, which is different from the first MEK, has been generated and stored in the NVM.

    Magnetic memory device
    10.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US12295268B2

    公开(公告)日：2025-05-06

    申请号：US17723845

    申请日：2022-04-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Byongguk Park ,  Jeong-Heon Park ,  Kyung-Jin Lee ,  Jeongchun Ryu

    IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N52/00 ,  H10N52/80 ,  H10N52/01

    Abstract: A magnetic memory device includes a conductive line extending in a first direction, a magnetic tunnel junction structure on a first surface of the conductive line, the magnetic tunnel junction structure comprising at least two magnetic patterns and a barrier pattern between the at least two magnetic patterns, and a magnetic layer on a second surface of the conductive line, which is opposite to the first surface. The magnetic layer includes magnetization components having a magnetization in a direction which is parallel to the second surface and intersects the first direction.

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