公开(公告)号：US09985036B2

公开(公告)日：2018-05-29

申请号：US15291265

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC: H01L29/78 ,  H01L27/11 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/306 ,  H01L29/16 ,  H01L29/161 ,  H01L27/088 ,  H01L29/45 ,  H01L29/51 ,  H01L21/28 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

公开(公告)号：US11874729B2

公开(公告)日：2024-01-16

申请号：US17532575

申请日：2021-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hun Lee ,  Myung-Sun Kim ,  Ayush Jain ,  Tae-Ho Hwang ,  Jae-Hong Kim ,  Hye-Jung Cho

IPC: G06F11/07

CPC classification number: G06F11/079 ,  G06F11/0709 ,  G06F11/0727 ,  G06F11/0751 ,  G06F11/0778

Abstract: A method performed by a managing server includes: receiving, from an electronic device, operation data of the electronic device; identifying, by using artificial intelligence (AI), a device usage pattern of the electronic device; identifying, by using the AI, information related to a failure or an abnormal operation of the electronic device and a solution to the failure or the abnormal operation based on the device usage pattern and the operation data received from the electronic device; and transmitting, to a user terminal, the information related to the failure or the abnormal operation of the electronic device and the solution to the failure or the abnormal operation.

公开(公告)号：US11182235B2

公开(公告)日：2021-11-23

申请号：US16047160

申请日：2018-07-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Hun Lee ,  Myung-Sun Kim ,  Ayush Jain ,  Tae-Ho Hwang ,  Jae-Hong Kim ,  Hye-Jung Cho

IPC: G06F11/07

Abstract: A method performed by an appliance includes receiving, from a managing server, information about a data pattern detection routine to detect abnormal data among operation data of the appliance, determining whether the operation data of the appliance matches a normal data pattern defined by the data pattern detection routine, determining the operation data as the abnormal data when the operation data does not match the normal data pattern, and transmitting the abnormal data to the managing server.

公开(公告)号：US10162671B2

公开(公告)日：2018-12-25

申请号：US14391860

申请日：2013-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rakie Kim ,  Myung-Sun Kim

IPC: G06F9/46 ,  G06F11/34 ,  G06F9/50

Abstract: A method and an apparatus for performing task scheduling in a terminal are provided. The terminal includes at least two different types of cores and determines if a change in a task state has occurred in response to at least one of the two cores, If a change in a task state has occurred, the terminal determines, for said at least one core, the variation in the duration of each of a plurality of tasks being executed, predicts the duration of each of the plurality of tasks on the basis of the change in the task state using the determined variation, and performs task scheduling for said at least one core in accordance with the predicted duration.

公开(公告)号：US20170033114A1

公开(公告)日：2017-02-02

申请号：US15291265

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC: H01L27/11 ,  H01L29/45 ,  H01L29/165 ,  H01L29/78 ,  H01L29/08

CPC classification number: H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

Abstract translation: 在半导体装置中，第一有源区具有第一Σ形状，第二有源区具有第二Σ形状。 当垂直于衬底并将第一栅电极的侧表面通过第一区域的线被定义为第一垂直线时，当垂直于衬底并通过第二栅电极的侧表面的线 在第二区域被定义为第二垂直线时，当第一垂直线和第一沟槽之间的最短距离被定义为第一水平距离时，并且当第二垂直线和第二沟槽之间的最短距离被定义为 第二水平距离，第一水平距离和第二水平距离之间的差等于或小于1nm。

公开(公告)号：US09502563B2

公开(公告)日：2016-11-22

申请号：US15071502

申请日：2016-03-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/306 ,  H01L29/16 ,  H01L29/161 ,  H01L27/088 ,  H01L27/11 ,  H01L29/45 ,  H01L29/51 ,  H01L21/28 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

Abstract translation: 在半导体装置中，第一有源区具有第一Σ形状，第二有源区具有第二Σ形状。 当垂直于衬底并将第一栅电极的侧表面通过第一区域的线被定义为第一垂直线时，当垂直于衬底并通过第二栅电极的侧表面的线 在第二区域被定义为第二垂直线时，当第一垂直线和第一沟槽之间的最短距离被定义为第一水平距离时，并且当第二垂直线和第二沟槽之间的最短距离被定义为 第二水平距离，第一水平距离和第二水平距离之间的差等于或小于1nm。

公开(公告)号：US20150067700A1

公开(公告)日：2015-03-05

申请号：US14391860

申请日：2013-04-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Rakie Kim ,  Myung-Sun Kim

IPC: G06F9/46

CPC classification number: G06F9/46 ,  G06F9/50 ,  G06F11/3419 ,  G06F11/3433 ,  G06F11/3466 ,  G06F2201/865 ,  G06F2209/5019

Abstract: A method and an apparatus for performing task scheduling in a terminal are provided. The terminal includes at least two different types of cores and determines if a change in a task state has occurred in response to at least one of the two cores, If a change in a task state has occurred, the terminal determines, for said at least one core, the variation in the duration of each of a plurality of tasks being executed, predicts the duration of each of the plurality of tasks on the basis of the change in the task state using the determined variation, and performs task scheduling for said at least one core in accordance with the predicted duration.

Abstract translation: 提供了一种用于在终端中执行任务调度的方法和装置。 终端包括至少两种不同类型的核，并且确定是否响应于两个核中的至少一个而发生了任务状态的改变。如果任务状态的改变已经发生，终端确定至少 一个核心，正在执行的多个任务中的每一个的持续时间的变化，使用所确定的变化量，基于任务状态的改变来预测多个任务中的每个任务的持续时间，并且对所述第 根据预测的持续时间，至少一个核心。

公开(公告)号：US09263495B2

公开(公告)日：2016-02-16

申请号：US14554511

申请日：2014-11-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungkwan Kim ,  Soo-Kyung Kim ,  Jung-kuk Park ,  Myung-Sun Kim ,  Jaesung Yun ,  Junetaeg Lee ,  Hakyu Choi

IPC: H01L21/00 ,  H01L27/146

CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14685

Abstract: A method of fabricating an image sensor is provided. The method may include preparing a substrate with first to third pixel regions, coating a first color filter layer on the substrate, sequentially forming a first sacrificial layer and a first protection layer to cover the first color filter layer, forming a first photoresist pattern on the first protection layer to be overlapped with the first pixel region, performing a first dry etching process using the first photoresist pattern as an etch mask to the first sacrificial layer and the first protection layer to form a first color filter, a first sacrificial pattern, and a first protection pattern sequentially stacked on the first pixel region, and selectively removing the first sacrificial pattern to separate the first protection pattern from the first color filter.

Abstract translation: 提供了一种制造图像传感器的方法。 该方法可以包括制备具有第一至第三像素区域的衬底，在衬底上涂覆第一滤色器层，顺序地形成第一牺牲层和第一保护层以覆盖第一滤色器层，在第一滤色器层上形成第一光致抗蚀剂图案 第一保护层与第一像素区域重叠，执行使用第一光致抗蚀剂图案作为第一牺牲层和第一保护层的蚀刻掩模的第一干蚀刻工艺以形成第一滤色器，第一牺牲图案和 第一保护图案，其顺序地堆叠在第一像素区域上，并且选择性地去除第一牺牲图案以将第一保护图案与第一滤色器分离。

公开(公告)号：US09324834B2

公开(公告)日：2016-04-26

申请号：US14534475

申请日：2014-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC: H01L29/772 ,  H01L29/66 ,  H01L29/78 ,  H01L29/08 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/306 ,  H01L29/16 ,  H01L29/161 ,  H01L21/28 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

Abstract translation: 在半导体器件中，第一有源区具有第一和第四形状，第二有源区具有第二“S”形。 当垂直于衬底并将第一栅电极的侧表面通过第一区域的线被定义为第一垂直线时，当垂直于衬底并通过第二栅电极的侧表面的线 在第二区域被定义为第二垂直线时，当第一垂直线和第一沟槽之间的最短距离被定义为第一水平距离时，并且当第二垂直线和第二沟槽之间的最短距离被定义为 第二水平距离，第一水平距离和第二水平距离之间的差等于或小于1nm。

公开(公告)号：US08907426B2

公开(公告)日：2014-12-09

申请号：US13908440

申请日：2013-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Suk Shin ,  Myung-Sun Kim ,  Seong-Jin Nam ,  Pan-Kwi Park ,  Hoi-Sung Chung ,  Nae-In Lee

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/08 ,  H01L29/165 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/10

CPC classification number: H01L27/1104 ,  H01L21/02532 ,  H01L21/02636 ,  H01L21/28247 ,  H01L21/30604 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/1116 ,  H01L29/0847 ,  H01L29/1083 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/45 ,  H01L29/513 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7827 ,  H01L29/7833 ,  H01L29/7834 ,  H01L29/7845 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/78696

Abstract: In a semiconductor device, a first active region has a first Σ-shape, and the second active region has a second Σ-shape. When a line that is perpendicular to the substrate and passes a side surface of a first gate electrode in the first region is defined as a first vertical line, when a line that is perpendicular to the substrate and passes a side surface of a second gate electrode in the second region is defined as a second vertical line, when a shortest distance between the first vertical line and the first trench is defined as a first horizontal distance, and when a shortest distance between the second vertical line and the second trench is defined as a second horizontal distance, a difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm.

Abstract translation: 在半导体器件中，第一有源区具有第一和第四形状，第二有源区具有第二“S”形。 当垂直于衬底并将第一栅电极的侧表面通过第一区域的线被定义为第一垂直线时，当垂直于衬底并通过第二栅电极的侧表面的线 在第二区域被定义为第二垂直线时，当第一垂直线和第一沟槽之间的最短距离被定义为第一水平距离时，并且当第二垂直线和第二沟槽之间的最短距离被定义为 第二水平距离，第一水平距离和第二水平距离之间的差等于或小于1nm。