公开(公告)号：US20170345822A1

公开(公告)日：2017-11-30

申请号：US15676317

申请日：2017-08-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kee Sang Kwon ,  Boun YOON ,  Sangjine PARK ,  Myunggeun SONG ,  Ki-Hyung KO ,  Jiwon YUN

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/66 ,  H01L29/51 ,  H01L29/49

Abstract: Semiconductor devices may include a substrate, gate electrodes on the substrate, and source/drain regions at both sides of each of the gate electrodes. Each of the gate electrodes may include a gate insulating pattern on the substrate, a lower work-function electrode pattern that is on the gate insulating pattern and has a recessed upper surface, and an upper work-function electrode pattern that conformally extends on the recessed upper surface of the lower work function electrode pattern. Topmost surfaces of the lower work-function electrode patterns may be disposed at an equal level, and the upper work-function electrode patterns may have different thicknesses from each other.

公开(公告)号：US20170301773A1

公开(公告)日：2017-10-19

申请号：US15632735

申请日：2017-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine PARK ,  Jae-Jik BAEK ,  Myunggeun SONG ,  Boun YOON ,  Sukhun CHOI ,  Jeongnam HAN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/165 ,  H01L21/02 ,  H01L29/08 ,  H01L21/768 ,  H01L21/311 ,  H01L21/3105

CPC classification number: H01L29/66545 ,  H01L21/0228 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/76897 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, and a gate capping pattern on the gate electrode. The gate capping pattern may have a width larger than that of the gate electrode, and the gate capping pattern may include extended portions extending toward the substrate and at least partially covering both sidewalls of the gate electrode.

公开(公告)号：US20240201103A1

公开(公告)日：2024-06-20

申请号：US18220985

申请日：2023-07-12

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Myunggeun SONG ,  Sarah KIM ,  Changyul KIM ,  Younghoon KIM ,  Jaeyong PARK ,  Sungil CHO ,  Taeil CHO

IPC: G01N21/94

CPC classification number: G01N21/94 ,  G01N2201/1248

Abstract: An inspection method includes extracting a first similarity by comparing first data of a first optical signal with reference data of a reference optical signal, generating a first normal distribution of the first similarity, extracting a second similarity by comparing second data of a second optical signal with the reference data of the reference optical signal, generating a second normal distribution of the second similarity, and comparing the first normal distribution with the second normal distribution. The extracting of the first similarity includes deriving the first data of the first optical signal.

公开(公告)号：US20160027901A1

公开(公告)日：2016-01-28

申请号：US14697829

申请日：2015-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangjine PARK ,  Jae-Jik BAEK ,  Myunggeun SONG ,  Boun YOON ,  Sukhun CHOI ,  Jeongnam HAN

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/49

CPC classification number: H01L29/66545 ,  H01L21/0228 ,  H01L21/31051 ,  H01L21/31111 ,  H01L21/76897 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/4983 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/7851

Abstract: Provided is a semiconductor device including a substrate with an active pattern, a gate electrode crossing the active pattern, and a gate capping pattern on the gate electrode. The gate capping pattern may have a width larger than that of the gate electrode, and the gate capping pattern may include extended portions extending toward the substrate and at least partially covering both sidewalls of the gate electrode.

Abstract translation: 提供了一种半导体器件，其包括具有活性图案的衬底，与有源图案交叉的栅极电极和栅电极上的栅极覆盖图案。 栅极封盖图案可以具有大于栅电极的宽度的宽度，并且栅极封盖图案可以包括朝向衬底延伸的延伸部分，并且至少部分地覆盖栅电极的两个侧壁。