公开(公告)号：US20180012737A1

公开(公告)日：2018-01-11

申请号：US15402749

申请日：2017-01-10

Applicant: Samsung Electronics Co., Ltd. ,  Nanotech Inc.

Inventor： Pyung Moon ,  Sung Ho Kang ,  Ki Chul Kim ,  Un Ki Kim ,  Yong Hun Lee ,  Jae Hee Lee ,  Yong Seok Song ,  Hang Mook Park ,  Je Hoon Oh

IPC: H01J37/32 ,  H05B37/02

CPC classification number: H01J37/32935 ,  H05B37/0227

Abstract: A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.

公开(公告)号：US20230402518A1

公开(公告)日：2023-12-14

申请号：US18202085

申请日：2023-05-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taejin Park ,  Kyujin Kim ,  Bongsoo Kim ,  Huijung Kim ,  Pyung Moon ,  Chulkwon Park ,  Gyunghyun Yoon ,  Heejae Chae

IPC: H01L29/423 ,  H10B12/00 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H10B12/315 ,  H01L29/4916

Abstract: An integrated circuit (IC) device includes a gate trench formed inside a substrate, the gate trench including a bottom portion and a sidewall portion, a gate electrode structure disposed apart from the bottom portion and the sidewall portion of the gate trench, the gate electrode structure including a gate electrode including a first sub-gate electrode formed in a lower portion of the gate trench and a second sub-gate electrode formed on the first sub-gate electrode and a gate capping layer formed on the second sub-gate electrode, and a gate insulating layer formed between the gate trench and the gate electrode structure, the gate insulating layer including a base insulating layer formed between the bottom portion and the sidewall portion of the gate trench and the gate electrode structure and a reinforcing insulating layer formed on a sidewall portion of the second sub-gate electrode.

公开(公告)号：US10262841B2

公开(公告)日：2019-04-16

申请号：US15402749

申请日：2017-01-10

Applicant: Samsung Electronics Co., Ltd. ,  Nanotech Inc.

Inventor： Pyung Moon ,  Sung Ho Kang ,  Ki Chul Kim ,  Un Ki Kim ,  Yong Hun Lee ,  Jae Hee Lee ,  Yong Seok Song ,  Hang Mook Park ,  Je Hoon Oh

IPC: H01J37/32 ,  H05B37/02

Abstract: A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.

公开(公告)号：US10607832B2

公开(公告)日：2020-03-31

申请号：US16164953

申请日：2018-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyeong Lee ,  Soonwook Jung ,  Bongjin Kuh ,  Pyung Moon ,  Sukjin Chung

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/3105 ,  H01L21/306

Abstract: Disclosed are method and apparatus for forming a thin layer. The method for forming the thin layer comprises providing a substrate including patterns, forming a bonding layer on the substrate covering an inner surface of a gap between the patterns, forming a preliminary layer on the bonding layer filling the gap; and thermally treating the preliminary layer to form the thin layer. The bonding layer is a self-assembled monomer layer formed using an organosilane monomer. The preliminary layer is formed from a flowable composition comprising polysilane.

公开(公告)号：US10037870B2

公开(公告)日：2018-07-31

申请号：US15260300

申请日：2016-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-ho Kang ,  Ki-chul Kim ,  Yong-hun Lee ,  Pyung Moon ,  Sun-young Lee ,  Un-ki Kim

IPC: H01L21/00 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01J37/32871 ,  H01J37/32862 ,  H01L21/324

Abstract: A method of performing a surface treatment includes passivating a surface of an insulating part in a reaction chamber, and then performing a hydrogen plasma annealing treatment on a substrate in the reaction chamber. The passivation of the surface of the insulating part includes supplying a nitrogen-based gas into the reaction chamber and exciting the nitrogen-based gas in the reaction chamber using a plasma generator.