公开(公告)号：US20230049816A1

公开(公告)日：2023-02-16

申请号：US17504755

申请日：2021-10-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： SOOYOUNG PARK ,  Seunghyun Song ,  Byounghak Hong ,  Seungchan Yun

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/66

Abstract: Integrated circuit devices and methods of forming the same are provided. Integrated circuit devices may include a first channel layer including a first surface, a second channel layer that is spaced apart from the first channel layer in a first direction and includes a second surface, a first gate electrode and a second gate electrode. The first surface and the second surface may be spaced apart from each other in the first direction and may face opposite directions. The first channel layer may be in the first gate electrode, and the first gate electrode may be absent from the first surface of the first channel layer. The second channel layer may be in the second gate electrode, and the second gate electrode may be absent from the second surface of the second channel layer.

公开(公告)号：US20250062192A1

公开(公告)日：2025-02-20

申请号：US18805631

申请日：2024-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： JAEHONG LEE ,  SOOYOUNG PARK ,  WONHYUK HONG ,  KANG-ILL SEO

IPC: H01L23/48 ,  H01L21/8238 ,  H01L27/07 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Integrated circuit devices and methods of forming the same. As an example, an integrated circuit device may include a substrate; a first transistor structure on the substrate; a second transistor structure stacked in a vertical direction on the first transistor structure; an isolation layer between the first transistor structure and the second transistor structure in the vertical direction; and a diode structure on the substrate and adjacent to the first transistor structure in a horizontal direction. The diode structure may be part of a discharging path between a gate electrode of the second transistor structure and the substrate. The discharging path may extend through the isolation layer.

公开(公告)号：US20240136354A1

公开(公告)日：2024-04-25

申请号：US18171754

申请日：2023-02-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUMSEOK PARK ,  SOOYOUNG PARK ,  JAEJIK BAEK ,  KANG-ILL SEO

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/08 ,  H01L29/786

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823418 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/78696

Abstract: Integrated circuit devices and methods of forming the same are provided. An integrated circuit device may include a substrate and a transistor stack on the substrate, the transistor stack including a first transistor and a second transistor on the first transistor. The first transistor may be between the substrate and the second transistor and the first transistor may include first and second source/drain regions, a first channel region between the first and second source/drain regions, and a first gate structure on the first channel region. A lower surface of the first source/drain region may be higher than a lower surface of the first gate structure relative to the substrate.