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公开(公告)号:US20190027539A1
公开(公告)日:2019-01-24
申请号:US15851763
申请日:2017-12-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Changhwa KIM , Sejung PARK , Junghun KIM , Sangsu PARK , Kyungrae BYUN , Beom Suk LEE
Abstract: An image sensor includes an insulating pattern disposed on a semiconductor substrate and having an opening, a color filter disposed within the opening of the insulating pattern, a capping insulating layer disposed on the color filter, a first electrode disposed on the capping insulating layer and having a portion overlapping with the color filter, a separation structure surrounding a side surface of the first electrode, and a photoelectric layer disposed on the first electrode. The separation structure includes a first insulating layer and a second insulating layer formed of different material.
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公开(公告)号:US20210175286A1
公开(公告)日:2021-06-10
申请号:US17034316
申请日:2020-09-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangchun PARK , Kwansik KIM , Hongki KIM , Sangsu PARK , Beomsuk LEE , Taeyon LEE , Gwideok Ryan LEE
IPC: H01L27/30 , H01L27/146 , H01L51/44
Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel, region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels, An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.
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公开(公告)号:US20240394331A1
公开(公告)日:2024-11-28
申请号:US18608453
申请日:2024-03-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sangsu PARK , Kyungsoo Kim , Nayeon Kim , Jinin So , Kyoungwan Woo , Younghyun Lee , Jong-Geon Lee , Jin Jung , Jeonghyeon Cho
Abstract: A compute express link (CXL) memory device includes a memory device storing data, and a controller configured to read the data from the memory device based on a first command received through a first protocol, select a calculation engine based on a second command received through a second protocol different from the first protocol, and control the calculation engine to perform a calculation on the read data.
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公开(公告)号:US20250060967A1
公开(公告)日:2025-02-20
申请号:US18642977
申请日:2024-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Younghyun LEE , Jinin SO , Kyungsoo KIM , Sangsu PARK , Jin JUNG , Jeonghyeon CHO
Abstract: Various example embodiments may include methods of operating a network device, non-transitory computer readable media including computer readable instructions for operating a network device, systems including a network device, and/or a compute express link (CXL) switching device for synchronizing data. A CXL-based system includes a plurality of CXL processing devices configured to perform matrix multiplication calculation based on input vector data and a partial matrix, and output at least one interrupt signal and at least one packet based on results of the matrix multiplication calculation, the at least one packet including output vector data and characteristic data associated with the output vector data, and a CXL switching device configured to, synchronize the output vector data, the synchronizing including performing a calculation operation on the output vector data based on the interrupt signal and the packet, and provide the synchronized vector data to the plurality of CXL processing devices.
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