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    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME
    2.
    发明申请
    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20230059590A1

    公开(公告)日：2023-02-23

    申请号：US17982955

    申请日：2022-11-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

    IPC: H01L43/08 ,  H01L27/22 ,  H01L43/02 ,  H01L43/10

    Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

    FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MAGNETIC RANDOM ACCESS MEMORY AND OPERATING METHOD THEREOF
    3.
    发明申请
    FIELD PROGRAMMABLE GATE ARRAY DEVICE INCLUDING SPIN ORBIT TORQUE-MAGNETIC RANDOM ACCESS MEMORY AND OPERATING METHOD THEREOF 有权

    公开(公告)号：US20250028458A1

    公开(公告)日：2025-01-23

    申请号：US18440618

    申请日：2024-02-13

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongsun PARK ,  Dongsu KIM ,  Seonggeon PARK

    IPC: G06F3/06 ,  G11C11/16 ,  H03K19/17728

    Abstract: Disclosed is a field programmable gate array device including a plurality of lookup tables each storing data. Each lookup table includes a cell array including cells connected to a plurality of word lines, a drive circuit connected to the cell array through the plurality of word lines, and a peripheral circuit connected to the cell array through a plurality of bit lines and source lines, and configured to control the drive circuit. The drive circuit drives a first word line among the word lines based on first input signals. The peripheral circuit performs a data write operation on a first cell connected to the first word line, based on a first command and a second input signal, and performs a data read operation on the first cell connected to the first word line, based on a second command and the second input signal.

    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME
    6.
    发明申请
    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20230019156A1

    公开(公告)日：2023-01-19

    申请号：US17735599

    申请日：2022-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Kiwoong KIM ,  Naoki HASE

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/02 ,  G11C11/16

    Abstract: Provided are a magnetic tunneling junction device having a fast operating speed without reducing or with increasing data retention and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a first free layer adjacent to the first oxide layer and a second free layer adjacent to the second oxide layer. The first free layer includes a magnetic material not doped with a non-magnetic metal, and the second free layer includes a magnetic material doped with the non-magnetic metal.

    MAGNETIC MEMORY DEVICE
    7.
    发明申请
    MAGNETIC MEMORY DEVICE 有权

    公开(公告)号：US20220123201A1

    公开(公告)日：2022-04-21

    申请号：US17490353

    申请日：2021-09-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ung Hwan PI ,  Seonggeon PARK ,  Jeong-Heon PARK ,  Sung Chul LEE

    IPC: H01L43/02 ,  H01L27/22 ,  H01F10/32

    Abstract: A magnetic memory device includes a first magnetic layer extending in a first direction, a pinned layer on the first magnetic layer, and a second magnetic layer vertically overlapping with the pinned layer with the first magnetic layer interposed between the pinned layer and the second magnetic layer. The first magnetic layer includes, a plurality of magnetic domains arranged in the first direction, and at least one magnetic domain wall between the plurality of magnetic domains, and a magnetization direction of the second magnetic layer is substantially parallel to a top surface of the first magnetic layer.

    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME
    9.
    发明申请
    MAGNETIC TUNNELING JUNCTION DEVICE AND MEMORY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20230020056A1

    公开(公告)日：2023-01-19

    申请号：US17701056

    申请日：2022-03-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

    IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  H01F10/32 ,  G11C11/16

    Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal/ The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

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