公开(公告)号：US20140246643A1

公开(公告)日：2014-09-04

申请号：US14192371

申请日：2014-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-bae KIM ,  Kyung-min KIM ,  Sung-ho KIM ,  Seung-ryul LEE ,  Man CHANG ,  Eun-ju CHO ,  Sae-jin KIM ,  Chang-jung KIM

IPC: H01L27/24

CPC classification number: H01L27/2481 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/249 ,  H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/146

Abstract: A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material.

Abstract translation: 存储器件可以包括与第一电极间隔开的第一电极和第二电极。 存储器件还可以包括设置在第一电极和第二电极之间的存储元件和设置在第一电极和第二电极之间的开关元件。 开关元件可以被配置为控制对存储器元件的信号访问。 存储器件还可以包括设置在存储器元件和开关元件之间的阻挡层，阻挡层包括绝缘材料。

公开(公告)号：US20140124728A1

公开(公告)日：2014-05-08

申请号：US13836564

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-jung KIM ,  Sung-ho KIM ,  Young-bae KIM ,  Seung-ryul LEE ,  U-in CHUNG

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2454 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147

Abstract: A resistive memory device has a structure in which a source, a channel layer, a drain, and a resistive memory layer are sequentially formed in a particular direction, with a gate electrode formed around the channel layer. The source, channel layer, and drain may be vertically stacked on a substrate, and the gate electrode may be formed completely around the channel layer.

Abstract translation: 电阻式存储器件具有其中源极，沟道层，漏极和电阻性存储器层在特定方向上顺序形成的结构，其中沟道层周围形成栅电极。 源极，沟道层和漏极可以垂直地堆叠在衬底上，并且栅电极可以完全围绕沟道层形成。

公开(公告)号：US20140092668A1

公开(公告)日：2014-04-03

申请号：US13867411

申请日：2013-04-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyung-min KIM ,  Young-bae KIM ,  Chang-jung KIM ,  Seung-ryul LEE ,  Man CHANG ,  Sung-ho KIM ,  Eun-ju CHO

IPC: H01L45/00

CPC classification number: H01L45/146 ,  G11C13/0007 ,  G11C13/0069 ,  G11C2213/32 ,  G11C2213/51 ,  G11C2213/55 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233

Abstract: A resistive switching device includes a first material layer between a first electrode and a second electrode. The first material layer has a first region and a second region parallel to the first region. The first region corresponds to a conducting path formed in the first material layer, and is configured to switch from a low-resistance state to a high-resistance state in response to an applied voltage that is greater than or equal to a first voltage. The second region is configured to switch to a first resistance value that is less than a resistance value of the first region in the high-resistance state when the applied voltage is greater than or equal to a second voltage. The first region remains constant or substantially constant when the second region has the first resistance value.

Abstract translation: 电阻式开关器件包括在第一电极和第二电极之间的第一材料层。 第一材料层具有平行于第一区域的第一区域和第二区域。 第一区域对应于形成在第一材料层中的导电路径，并且被配置为响应于大于或等于第一电压的施加电压从低电阻状态切换到高电阻状态。 第二区域被配置为当施加的电压大于或等于第二电压时，切换到低于高电阻状态下的第一区域的电阻值的第一电阻值。 当第二区域具有第一电阻值时，第一区域保持恒定或基本恒定。

公开(公告)号：US20130121060A1

公开(公告)日：2013-05-16

申请号：US13672113

申请日：2012-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang-bum LEE ,  Young-bae KIM ,  Kyung-min KIM ,  Chang-jung KIM ,  Dong-soo LEE ,  Myoung-jae LEE ,  Seung-ryul LEE ,  Man CHANG

IPC: H01L45/00 ,  G11C11/56 ,  H01L21/62 ,  H01L27/24

CPC classification number: G11C13/0007 ,  G11C11/5685 ,  G11C13/0069 ,  G11C2013/0071 ,  G11C2213/15 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/56 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

Abstract: Non-volatile memory elements, memory devices including the same, and methods for operating and manufacturing the same may include a memory layer between a first electrode and a second electrode spaced apart from the first electrode. The memory layer may include a first material layer and a second material layer, and may have a resistance change characteristic due to movement of ionic species between the first material layer and the second material layer. At least the first material layer of the first and second material layers may be doped with a metal.

Abstract translation: 非易失性存储器元件，包括其的存储器件及其操作和制造方法可以包括在与第一电极间隔开的第一电极和第二电极之间的存储层。 存储层可以包括第一材料层和第二材料层，并且可以由于第一材料层和第二材料层之间的离子物质的移动而具有电阻变化特性。 至少第一和第二材料层的第一材料层可以掺杂金属。